| 1. |
- Danielsson, E., et al.
(författare)
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Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2372-2379
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Tidskriftsartikel (refereegranskat)abstract
- AlGaN/4H-SiC heterojunction diodes with varying composition of Al have been fabricated. Five different compositions were investigated, GaN, Al0.1Ga0.9N, Al0.15Ga0.85N, Al0.3Ga0.7N, and Al0.5Ga0.5N, along with a 4H-SiC homojunction diode for comparison. The turn on voltage was around 1 V, and the ideality factor between 1 and 2 for all heterojunction diodes except for the Al0.3Ga0.7N diode. This diode had an ideality factor between 2 and 3, and also showed a much lower series resistance, indicating a change in transport mechanism across the junction. A tunnel assisted recombination model was analyzed and compared to the extracted values of the GaN diode. The model agreed well with both current-voltage and capacitance-voltage measurements for this diode. This model was not applied to the other samples, since their characteristics could not be explained by a simple mechanism.
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| 2. |
- Danielsson, E., et al.
(författare)
-
Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC
- 2001
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 48:3, s. 444-449
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Tidskriftsartikel (refereegranskat)abstract
- GaN/SiC heterojunctions can improve the performance considerably for BJTs and FETs. In this work, heterojunction diodes have been manufactured and characterized. The fabricated diodes have a GaN n-type cathode region on top of a JH-SIC p-type epi layer. The GaN layer was grown with HVPE directly on off-axis SiC without a buffer layer. Mesa structures were formed and a Ti metallization was used as cathode contact to GaN, and the anode contact was deposited on the backside using sputtered Al. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on the diode structures. The ideality factor of the measured diodes was 1.1 and was constant with temperature. A built in potential of 2.06 V was extracted from I-V-measurements and agrees well with the built in potential from C-V-measurements. The conduction band offset was extracted to 1.1 eV and the heterojunction was of type II. The turn on voltage for the diodes is about 1 V lower than expected and a suggested mechanism for this effect is discussed.
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| 3. |
- Kalinina, E., et al.
(författare)
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High-dose Al-implanted 4H-SiC p(+)-n-n(+) junctions
- 2000
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 77:19, s. 3051-3053
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Tidskriftsartikel (refereegranskat)abstract
- p(+)-n-n(+) junctions were fabricated by ion implantation with Al of low-doped epitaxial n layers of 4H-SiC grown by chemical vapor deposition on commercial 4H-SiC wafers both with and without reduction of micropipe densities. It was shown that, using high levels of Al ion doping (5x10(16) cm(-2)) in combination with rapid thermal anneal, single-crystal p(+)-4H-SiC layers can be obtained. These layers do not form barriers at the contact metal-semiconductor interface and do not introduce additional resistance into structures with p(+)-n junctions. This significantly reduces the forward voltage drop across the structure in a wide range of current densities up to 10(4) A cm(-2).
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| 4. |
- Kalinina, E., et al.
(författare)
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Material quality improvements for high voltage 4H-SiC diodes
- 2001
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Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 80:03-jan, s. 337-341
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Tidskriftsartikel (refereegranskat)abstract
- The influence of thin 4H-SiC buffer layers grown by liquid phase epitaxy (LPE) on structural quality of 4H-SiC low-doped epitaxial layers, grown by chemical vapor deposition (CVD) was investigated in detail. A dramatic defect density reduction in CVD epitaxial layers grown on commercial wafers with buffer LPE layer was detected. P(+)n junctions were formed on these CVD layers by high dose Al ion implantation followed by rapid thermal anneal. It was shown that both the increase of diffusion lengths of minority carriers (Lp) in CVD lavers and the forming of p(+)-layers after Al ion implantation and high temperature anneal lead to superior device characteristics.
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| 5. |
- Kalinina, E., et al.
(författare)
-
Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:10, s. 5402-5409
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Tidskriftsartikel (refereegranskat)abstract
- Results of complex studies of structural, optical, and electrical characteristics of 4H-SiC n-type low-doped epitaxial layers grown by the chemical vapor deposition (CVD) method are presented. Characteristics of CVD layers grown on commercial wafers with and without a thin (<0.1 mum) buffer layer grown by liquid phase epitaxy (LPE) between the commercial wafer and CVD epitaxial layer were compared. It has been shown that the LPE filling process caused a significant improvement in the structural quality of CVD layers. Cathodoluminescence (CL) data and electrical characteristics of Schottky barriers (SB) revealed that the LPE layer also made the concentration profiles of the uncompensated donors and recombination centers for holes as well as the hole diffusion lengths more uniform over the CVD layer. According to CL and secondary ion mass-spectroscopy measurements the presence of aluminum as an impurity was detected in initial commercial wafers, as well as having LPE and CVD epitaxial layers. Forward current-voltage characteristics of SBs formed on CVD layers with and without a LPE buffer layer followed an exponential relationship with an ideality factor of 1.04-1.06 over six to seven orders of magnitude in current density. A noticeable increase of the breakdown voltage was also observed in samples with a LPE layer.
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