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Träfflista för sökning "WFRF:(Edoff Marika 1965 ) srt2:(2009)"

Sökning: WFRF:(Edoff Marika 1965 ) > (2009)

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1.
  • Böhnke, Tobias, et al. (författare)
  • Copper indium gallium diselenide thin films for sun angle detectors in space applications
  • 2009
  • Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 517:6, s. 2063-2068
  • Tidskriftsartikel (refereegranskat)abstract
    • This work reports on processing, analysis and characterization of copper indium gallium diselenide (CIGS)used as a photosensitive layer for sensors such as sun angle detectors in space applications. CIGS-based solarcell devices with different CIGS layer thicknesses and the pn-junction located on the opposite side of theincidence of light were illuminated through their ultra-thin transparent molybdenum back contacts. Theresults from the current density versus voltage and quantum efficiency measurement indicate that the CIGSabsorber layer may not exceed 750 nm at backside illumination, due to the limited CIGS diffusion length.
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2.
  • Igalson, Margaret, et al. (författare)
  • Reinterpretation of defect levels derived from capacitance spectroscopy of CIGSesolar cells
  • 2009
  • Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 517:7, s. 2153-2157
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work we make an attempt to clarify ambiguities and to present our present understanding of defectsand defect-related phenomena affecting the capacitance characteristics of Cu(In,Ga)Se2-based solar cells. Wediscuss deep defect levels derived from admittance and deep level transient spectroscopy, as well as shallowlevels affecting the charge distributions by capacitance–voltage profiling. The discussion includes two typesof metastable effects affecting capacitance characteristics: one induced at room temperature by light orvoltage bias, and one created at low temperature by red illumination of reverse-biased junction (ROB effect).Recent theoretical achievements on negative-U properties of such intrinsic defects as selenium vacancies andInCu antisites are used to explain the experimental data. We show that the most prominent level in theadmittance spectra is due to the response of interface states combined with contribution of deep VSe–VCu−/2−acceptor level. We attribute the ROB metastability to the relaxation of InCu defects upon electron capture.Finally we discuss the influence of these defects on the device efficiency.
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  • Resultat 1-2 av 2
Typ av publikation
tidskriftsartikel (2)
Typ av innehåll
refereegranskat (2)
Författare/redaktör
Edoff, Marika, 1965- (2)
Böhnke, Tobias (1)
Igalson, Margaret (1)
Urbaniak, Alexander (1)
Lärosäte
Uppsala universitet (2)
Språk
Engelska (2)
Forskningsämne (UKÄ/SCB)
Naturvetenskap (2)
År
2009 (2)Ta bort avgränsningen

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