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- Hagiwara, K, et al.
(författare)
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Review of particle physics
- 2002
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Ingår i: Physical Review D (Particles and Fields). - 0556-2821. ; 66:1
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Forskningsöversikt (refereegranskat)abstract
- This biennial Review summarizes much of Particle Physics Using data from previous editions, plus 2205 new measurements from 667 papers, we list, evaluate, and average measured properties of gauge bosons, leptons, quarks, mesons, and baryons We also summarize searches for hypothetical particles such as Higgs bosons, heavy neutrinos, and supersymmetric particles All the particle properties and search limits are listed in Summary Tables We also give numerous tables, figures, formulae, and reviews of topics such as the Standard Model, particle detectors, probability, and statistics This edition features expanded coverage of CP violation in B mesons and of neutrino oscillations For the first time we cover searches for evidence of extra dimensions (both in the particle listings and in a new review) Another new review is on Grand Unified Theories A booklet is available containing the Summary Tables and abbreviated versions of some of the other sections of this full Review All tables, listings, and reviews (and errata) are also available on the Particle Data Group website http //pdg 1b1 gov.
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| 7. |
- Ahuja, R., et al.
(författare)
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Optical properties of 4H-SiC
- 2002
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Ingår i: J. Appl. Phys.. ; 91:4, s. 2099-2103
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Tidskriftsartikel (refereegranskat)
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- Edwards, MOM, et al.
(författare)
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'Electric-paint displays' with carbon counter electrodes
- 2001
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Ingår i: ELECTROCHIMICA ACTA. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0013-4686. ; 46:13-14, s. 2187-2193
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Tidskriftsartikel (refereegranskat)abstract
- 'Electric-paint displays' are electrochromic displays with dyed nanostructured metal-oxide electrodes, e.g. viologen-derivatized nanostructured titanium dioxide electrodes. Such displays are particularly promising for applications with low switch frequenc
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- Edwards, M. O. M., et al.
(författare)
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'Electric-paint displays' with carbon counter electrodes
- 2001
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Ingår i: Electrochimica Acta. - 0013-4686 .- 1873-3859. ; 46:13-14, s. 2187-2193
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Tidskriftsartikel (refereegranskat)abstract
- 'Electric-paint displays' are electrochromic displays with dyed nanostructured metal-oxide electrodes, e.g. viologen-derivatized nanostructured titanium dioxide electrodes. Such displays are particularly promising for applications with low switch frequency, large segment areas, and high demands on colours, background brightness, and large viewing-angles. The concept is simple and well suited for inexpensive industrial production methods. We present blue-on-white electric-paint displays with porous carbon counter electrodes. The initial results with laboratory prototypes are promising. The switch time is about 1/2 s and the reflectance in the bleached state is as high as 40-55% in the visible region. Furthermore, the display prototypes sustain more than 100 000 switching cycles without severe degradation. The results from spectroelectrochemical measurements on the assembled displays are presented.
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- Edwards, N.V., et al.
(författare)
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Optical characterization of wide bandgap semiconductors
- 2000
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 364:1, s. 98-106
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Tidskriftsartikel (refereegranskat)abstract
- Our work primarily concerns the characterization of wide-gap III-V nitride semiconductors, nondestructively and at variable temperature, with spectroscopic ellipsometry (SE) and reflectometry in the spectral range from 1.5 to 6 eV. In the case of GaN, there are three main concerns associated with such data: (a) the quantification of the dispersion of the index of refraction with energy, (b) the removal of surface overlayers in real-time, and (c) the determination of the variation of valence bands with biaxial stress and the quantification of residual stress in thin films. The SE and reflectance capabilities provide (1) broadband spectra from 1.5 to 6 eV, which yield information about (a) below the bandgap and (b) above it, and (2) high resolution spectra (less than 1 meV at 3.4 eV) in the vicinity of the gap (3.3-3.6 eV), which enables (c). Here we will discuss issues concerning the relation of (c) to GaN material and growth parameters, though similar data for other wide bandgap materials will be discussed where relevant. Specifically, optimal heterostructure design for potential valence band engineering applications will be discussed in the context of trends in residual stress as a function of film thickness, growth temperature and substrate orientation for GaN/AlN/6H-SiC heterostructures. Standard heterostructures are mostly compressive for samples less than about 0.7 µm thick, are tensile up to about 2 µm and then abruptly become less tensile with stress values near 1 kbar thereafter. Additionally, these trends can be circumvented for moderately thick (approximately 2 µm) GaN layers (normally>2 kbar, tensile) by the introduction of a `buried interface' approach, namely, a strain mediating layer (SML) above the standard high-temperature AlN buffer layer designed to yield a range of compressive stresses from 0 to 2 kbar. The strain characteristics but also the growth rates of subsequently deposited nitride layers can be modulated by changing the growth parameters of the SML. This is achieved by in situ techniques during crystal growth without degrading the optical and structural properties of the deposited layer, as confirmed by XRD, SEM, PL, and AFM data taken on the overlying GaN layers. These results are interpreted in terms of coefficient of thermal expansion data for the layers and data concerning the planarization of GaN layers and growth behavior in non-(0001) directions.
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