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High-pressure synthesized nanostructural MgB2 materials with high performance of superconductivity, suitable for fault current limitation and other applications

Prikhna, Tatjana A. (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
Gawalek, Wolfgang (author)
Institut für Photonische Technologien, Jena, D-07745, Germany
Goldacker, Wilfried (author)
Karlsruhe Institute of Technology (KIT), 76344 Eggenstein, Germany
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Savchuk, Yaroslav M. (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
Noudem, Jacques (author)
CNRS/CRISMAT/ISMRA, CNRS UMR 6508, 14050 Caen, France
Soldatov, Alexander (author)
Luleå tekniska universitet,Institutionen för tillämpad fysik, maskin- och materialteknik
Eisterer, Mikhael (author)
TU Wien-Atominstitut, Vienna University of Technology, Institute of Atomic and Subatomic Physics, 1020 Wien, Austria
Weber, Hárald W. (author)
TU Wien-Atominstitut, Vienna University of Technology, Institute of Atomic and Subatomic Physics, 1020 Wien, Austria
Sokolovsky, Vladimir (author)
Ben-Gurion University of the Negev, Beer-Sheva 8410, Israel
Serga, Maxim (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
Dub, Sergey N. (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
Wendt, Michael (author)
Institut für Photonische Technologien, Jena, D-07745, Germany
You, Shujie (author)
Luleå tekniska universitet,Institutionen för tillämpad fysik, maskin- och materialteknik
Sergienko, Nina V. (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
Moshchil, Viktor E. (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
Tkash, Vasiliy N. (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
Dellith, Jan (author)
Institut für Photonische Technologien, Jena, D-07745, Germany
Karau, Friedrich (author)
H.C. Starck GmbH, Goslar 38642, Germany
Tomsic, Mikhael (author)
Hyper Tech Research, Inc., Columbus, OH 43212, United States
Shmidt, Christa (author)
Institut für Photonische Technologien, Jena, D-07745, Germany
Fresenko, Igor P. (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
Habisreuther, Tobias (author)
Institut für Photonische Technologien, Jena, D-07745, Germany
Litzkendorf, Doris (author)
Institut für Photonische Technologien, Jena, D-07745, Germany
Meerovich, Viktor (author)
Ben-Gurion University of the Negev, Beer-Sheva 8410, Israel
Sverdun, Vladimir B. (author)
Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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 (creator_code:org_t)
2011
2011
English.
In: IEEE transactions on applied superconductivity (Print). - 1051-8223 .- 1558-2515. ; 21:3, s. 2694-2697
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A variety of samples made via different routes were investigated. Samples are nanostructured (average grain sizes are about 20 nm). The advantage of high-pressure (HP)-manufactured (2 GPa, 800-1050 degrees C, 1 h) MgB2 bulk is the possibility to get almost theoretically dense (1-2% porosity) material with very high critical current densities reaching at 20 K, in 0-1 T j(c) = 1.2 - 1.0 . 10(6) A/cm(2) (with 10% SiC doping) and j(c) = 9.2 - 7.3 10(5) A/cm(2) (without doping). Mechanical properties are also very high: fracture toughness up to 4.4 +/- 0.04 MPa . m(0.5) and 7.6 +/- 2.0 MPa . m(0.5) at 148.8 N load for MgB2 undoped and doped with 10% Ta, respectively. The HP-synthesized material at moderate temperature (2 GPa, 600 degrees C, 1 h) from B with high amount of impurity C (3.15%) and H (0.87%) has j(c) = 10(3) A/cm(2) in 8 T field at 20 K, highest irreversibility fields (at 18.4 K H-irr = 15 T) and upper critical fields (at 22 K H-C2 = 15 T) but 17% porosity. HP materials with stoichiometry near MgB12 can have T-c = 37 K and j(c) = 6 . 10(4) A/cm(2) at 0 T and H-irr = 5 T at 20 K. The spark plasma synthesized (SPS) material (50 MPa, 600-1050 degrees C 1.3 h, without additions), demonstrated at 20 K, in 0-1 T j(c) = 4.5 - 4 10(5) A/cm(2). Dispersed inclusions of higher magnesium borides, which are usually present in MgB2 structure and obviously create new pinning centers can be revealed by Raman spectroscopy (for the first time a spectrum of MgB7 was obtained). Tests of quench behavior, losses on MgB2 rings and material thermal conductivity show promising properties for fault current limiters. Due to high critical fields, the material can be used for magnets.

Subject headings

NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

Keyword

Fysik
Physics

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