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Unlocking diamond's potential as an electronic material

Balmer, R. S. (author)
Friel, I. (author)
Woollard, S. M. (author)
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Wort, C. J. H. (author)
Scarsbrook, G. A. (author)
Coe, S. E. (author)
El-Hajj, H. (author)
Kaiser, A. (author)
Denisenko, A. (author)
Kohn, E. (author)
Isberg, Jan (author)
Uppsala universitet,Elektricitetslära
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 (creator_code:org_t)
2007-11-19
2008
English.
In: Philosophical Transactions. Series A. - London : Royal Society of London. - 1364-503X .- 1471-2962. ; 366:1863, s. 251-265
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • In this paper, we review the suitability of diamond as a semiconductor material for high-performance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30mAmm -1 along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.

Keyword

Potential energy
Doping (additives)
Electric potential
MESFET devices
Semiconductor materials
Synthetic diamonds
TECHNOLOGY
TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)
art (subject category)

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