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Träfflista för sökning "WFRF:(Endres D) srt2:(2005-2009)"

Sökning: WFRF:(Endres D) > (2005-2009)

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1.
  • Lemme, Max C., 1970-, et al. (författare)
  • Complementary metal oxide semiconductor integration of epitaxial Gd(2)O(3)
  • 2009
  • Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 27:1, s. 258-261
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper, epitaxial gadolinium oxide (Gd(2)O(3)) is reviewed as a potential high-K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor (CMOS) processes. The material shows promising intrinsic properties, meeting critical ITRS targets for leakage current densities even at subnanometer equivalent oxide thicknesses. These epitaxial oxides can be integrated into a CMOS platform by a "gentle" replacement gate process. While high temperature processing potentially degrades the material, a route toward thermally stable epitaxial Gd(2)O(3) gate dielectrics is explored by carefully controlling the annealing conditions.
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2.
  • Gottlob, H. D. B., et al. (författare)
  • Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics
  • 2006
  • Ingår i: ESSDERC 2006. - 9781424403011 ; , s. 150-153
  • Konferensbidrag (refereegranskat)abstract
    • Two process concepts for integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd2O3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages.
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