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- Bengtsson, Stefan, 1961, et al.
(författare)
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Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
- 1999
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Ingår i: conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.. ; , s. 133-
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Konferensbidrag (refereegranskat)abstract
- Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated
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- Ericsson, Henrik, et al.
(författare)
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Division of Listeria monocytogenes serovar 4b strains into two groups by PCR and restriction enzyme analysis
- 1995
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Ingår i: Applied and Environmental Microbiology. - : American Society for Microbiology. - 0099-2240 .- 1098-5336. ; 61:11, s. 3872-3874
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Tidskriftsartikel (refereegranskat)abstract
- Altogether, 133 strains of Listeria monocytogenes serovar 4b were investigated, A segment of 2,916 bp containing parts of the two genes inlA and inlB in L. monocytogenes was amplified by the PCR technique. The PCR product obtained was cleaved with the restriction enzyme AluI, and the fragments generated were separated by gel electrophoresis, leading to two distinct groups: PCR-restriction enzyme analysis groups I and II, containing 37 and 96 strains, respectively, The PCR-restriction enzyme analysis method described in this paper could be a useful tool for the subtyping of L. monocytogenes serovar 4b strains.
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- Ericsson, Henrik, et al.
(författare)
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Subtyping of a frequent phagovar of Listeria monocytogenes in Sweden by use of restriction endonuclease analysis
- 1993
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Ingår i: APMIS. - : John Wiley & Sons. - 0903-465X .- 1600-5503 .- 0903-4641 .- 1600-0463. ; 101:7-12, s. 971-974
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Tidskriftsartikel (refereegranskat)abstract
- In Sweden, many Listeria monocytogenes strains belonging to serovar 4b and isolated during the last five years from different sources share the same phagovar - 2389:2425:3274:2671:47:108:340. The object of the present study was to investigate if 31 L. monocytogenes serovar 4b strains belonging to this particular phagovar could be differentiated by use of a simple restriction endonuclease analysis (REA). Among the enzymes tested, Xho I was found to be the most useful, since this enzyme could divide the 31 strains into five groups. The profiles of all human clinical isolates were indistinguishable from each other, which indicates that these strains may represent a single clone. The food isolates and the strains of human origin did not share the same profile. This further characterization may be of epidemiological importance as this phagovar of L. monocytogenes has been associated with at least two outbreaks of human listeriosis in Europe.
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- Ericsson, Per, 1968, et al.
(författare)
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Bonded Al2O3-covered Si-wafers for highly thermally conductive SOI-materials
- 1998
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Ingår i: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 576-
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Konferensbidrag (refereegranskat)abstract
- Aluminum oxide films deposited by low temperature atomic layer epitaxy were studied as an alternative to the commonly used silicon dioxide buried insulator of bonded silicon on insulator wafers. Successful room temperature bonding was performed between bare hydrophilic silicon wafers and silicon wafers covered with aluminum oxide. The surface energy after room temperature bonding was 50 mJ/m2, and after an anneal at 330°C, it had increased to 600 mJ/m2. After annealing at 500°C, the silicon wafers fractured upon insertion of a 50 μm blade. Higher temperatures than 500°C resulted in wafer separation, probably due to film densification and associated tensile stress. Leakage currents through the aluminum oxide films and breakdown electric fields were satisfactory for the intended application after a post-deposition anneal
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- Ericsson, Per, 1968, et al.
(författare)
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Effects of different prebonding cleaning procedures on the buried oxides of bond-and-etchback silicon-on-insulator materials
- 1995
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Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 115-
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Konferensbidrag (refereegranskat)abstract
- Chemical element distributions and electrical properties of metal-oxide-semiconductor devices made of bond-and-etchback silicon-on-insulator materials were investigated. The buried oxide functioned as the gate dielectric for the metal-oxide-semiconductor devices. Three groups of devices with different bonded interface locations and prebonding cleaning procedures were made. Secondary ion mass spectroscopy revealed that bonded oxides cleaned using an RCA clean before contacting had a higher concentration of hydrogen at the bonded interface compared to devices rinsed in deionized water only. The RCA cleaned devices were also more sensitive to bias-temperature stress and charge injection by internal photoemission. Finally, partial etchback of the bonded oxides of RCA cleaned devices made the top oxide crack at several locations
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