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- Bengtsson, Stefan, 1961, et al.
(författare)
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Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
- 1999
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Ingår i: conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.. ; , s. 133-
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Konferensbidrag (refereegranskat)abstract
- Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated
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| 4. |
- Ericsson, Per, 1968, et al.
(författare)
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Bonded Al2O3-covered Si-wafers for highly thermally conductive SOI-materials
- 1998
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Ingår i: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 576-
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Konferensbidrag (refereegranskat)abstract
- Aluminum oxide films deposited by low temperature atomic layer epitaxy were studied as an alternative to the commonly used silicon dioxide buried insulator of bonded silicon on insulator wafers. Successful room temperature bonding was performed between bare hydrophilic silicon wafers and silicon wafers covered with aluminum oxide. The surface energy after room temperature bonding was 50 mJ/m2, and after an anneal at 330°C, it had increased to 600 mJ/m2. After annealing at 500°C, the silicon wafers fractured upon insertion of a 50 μm blade. Higher temperatures than 500°C resulted in wafer separation, probably due to film densification and associated tensile stress. Leakage currents through the aluminum oxide films and breakdown electric fields were satisfactory for the intended application after a post-deposition anneal
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| 5. |
- Ericsson, Per, 1968, et al.
(författare)
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Effects of different prebonding cleaning procedures on the buried oxides of bond-and-etchback silicon-on-insulator materials
- 1995
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Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 115-
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Konferensbidrag (refereegranskat)abstract
- Chemical element distributions and electrical properties of metal-oxide-semiconductor devices made of bond-and-etchback silicon-on-insulator materials were investigated. The buried oxide functioned as the gate dielectric for the metal-oxide-semiconductor devices. Three groups of devices with different bonded interface locations and prebonding cleaning procedures were made. Secondary ion mass spectroscopy revealed that bonded oxides cleaned using an RCA clean before contacting had a higher concentration of hydrogen at the bonded interface compared to devices rinsed in deionized water only. The RCA cleaned devices were also more sensitive to bias-temperature stress and charge injection by internal photoemission. Finally, partial etchback of the bonded oxides of RCA cleaned devices made the top oxide crack at several locations
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| 9. |
- Ericsson, Per, 1968, et al.
(författare)
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Oxygen partial pressure influence on internal oxidation of SIMOX wafers
- 1997
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Ingår i: 1997 IEEE International SOI Conference Proceedings (Cat. No.97CH36069). ; , s. 48-
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Konferensbidrag (refereegranskat)abstract
- Internal oxidation (ITOX) of the buried oxide (BOX) of low dose SIMOX wafers has attracted a lot of attention in the last few years for its beneficial effect on the electrical and structural properties of the BOX. Models have been proposed to explain the ITOX process in terms of atomic oxygen diffusing through the silicon device layer to the BOX where it reacts with the bottom silicon interface to produce new silicon dioxide. Using the models with fitted parameters has shown good agreement with experimental data. However, the details regarding the dissociation of oxygen molecules before entering the device layer as well as the reaction of atomic oxygen with the back device layer surface were left unattended. The results presented suggest that these two processes could have a significant impact on the oxidation results and thus need to be studied to arrive at a valid model for the ITOX process
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