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Träfflista för sökning "WFRF:(Eriksson L.G.) srt2:(1995-1999)"

Sökning: WFRF:(Eriksson L.G.) > (1995-1999)

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  • Fogelberg, J., et al. (författare)
  • Kinetic modelling of hydrogen ad/absorption in thin films of hydrogen sensitive field effect devices : Observation of large hydrogen induced dipoles at the Pd/SiO2 interface
  • 1995
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 78, s. 988-
  • Tidskriftsartikel (refereegranskat)abstract
    • A kinetic modeling of the hydrogen interaction with a Pd‐SiO2‐Si (Pd‐MOS) device is reported. The model is fitted to a number of experimental results, mainly from mass spectrometric desorption measurements. The new results verify an older description of the energetics of hydrogen adsorption states at the Pd/SiO2 interface in the sense that the adsorption may be described by a so‐called Temkin isotherm; however, several new findings have to be incorporated into the model in order to obtain a consistent picture. The initial heat of adsorption at the interface is around 0.8 eV/hydrogen atom. The number of adsorption sites at the interface is considerably smaller than at the surface, 6×1017 m−2 versus 1.5×1019 m−2. Furthermore, the interface hydrogen atoms are strongly polarized. An average value of 2 Debye is obtained. It is the large hydrogen polarization at the Pd/SiO2 interface and not a large concentration of adsorbed hydrogen atoms per se which accounts for the very high sensitivity of a Pd‐MOS device as hydrogen sensor
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