| 1. |
- Kobayashi, M., et al.
(författare)
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3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
- 2011
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 679-680, s. 645-648
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Tidskriftsartikel (refereegranskat)abstract
- 3C-SiC MOSFET with 200 cm2/Vs channel mobility was fabricated. High performance device processes were adopted, including room temperature implantation with resist mask, polysilicon-metal gates, aluminium interconnects with titanium and titanium nitride and a specially developed activation anneal at 1600°C in Ar to get a smooth 3C-SiC surface and hence the expected high channel mobility. CVD deposited oxide with post oxidation annealing was investigated to reduce unwanted oxide charges and hence to get a better gate oxide integrity compared to thermally grown oxides. 3C-SiC MOSFETs with 600 V blocking voltage and 10 A drain current were fabricated using the improved processes described above. The MOSFETs assembled with TO-220 PKG indicated specific on-resistances of 5 to 7 mΩcm2.
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| 2. |
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| 3. |
- Esteve, Romain, et al.
(författare)
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Comparative study of thermal oxides and post-oxidized depositedoxides on n-type free standing 3C-SiC
- 2010
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 645-648, s. 829-832
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Tidskriftsartikel (refereegranskat)abstract
- The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidationand an advanced oxidation process combining SiO 2 deposition with rapid post oxidation steps havebeen compared. Two alternative SiO 2 deposition techniques have been studied: the plasmaenhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition(LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms ofinterface traps density and reliability.
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| 4. |
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| 5. |
- Esteve, Romain, et al.
(författare)
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Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)
- 2010
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Ingår i: AIP Conference Proceedings. - : AIP Publishing. - 9780735408470 ; , s. 55-58
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Konferensbidrag (refereegranskat)abstract
- The electrical properties of post-oxidized PECVD oxides in wet oxygen based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid and Chemical-Vapor-Deposition mechanisms on 6H-SiC(0001) have been studied. Different 6H-SiC(0001) samples exhibiting diverse crystal orientations (on-axis, 2 degrees off-axis) and growth conditions were regarded. A comparative study of oxide qualities has been carried out via capacitance and conductance measurements (C-G-V). Achieved interface traps densities and effective oxide charges were compared for the different samples. Reliability issues have been considered via current measurements (I-V and TZDB) and statistical data treatment techniques (Weibull plots). Oxides based on 3C-SiC layer grown by a process combining VLS and CVD methods demonstrated low interface states densities D-it of 1.2 x 10(10) eV(-1)cm(-2) at 0.63 eV below the conduction band and fixed oxide charges Q(eff)/(g) estimated to -0.1 x 10(11) cm(-2)
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| 6. |
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| 7. |
- Esteve, Romain, et al.
(författare)
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Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures
- 2011
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 5:158, s. 496-501
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Tidskriftsartikel (refereegranskat)abstract
- The electrical properties of metal-insulator-semiconductor (MIS) devices based on ONO (SiO2-Si3N4-SiO2) structures fabricatedon n-type 4H-SiC (0001) epilayers have been investigated. Three different combinations of low-pressure chemical vapordeposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD) and thermal oxidations (TO) in N2O and wet oxygenH2O:O2 were studied for the formation of the ONO stack. In addition, the influence of the thickness of SiO2and Si3N4 layers were considered and recommendations for optimal ONO structure are given. Oxide characterization tests and reliability investigations have been performed at room and high temperatures. This comparative study resulted in the development of ONO structuresdescribing low oxide/near interface/interface defects and high reliability of the devices even at high temperature.
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| 8. |
- Ghandi, Reza, et al.
(författare)
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Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs
- 2010
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 645-648:Part 1-2, s. 661-664
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 degrees C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.
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| 9. |
- Åstlund, L, et al.
(författare)
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4H- 6H-SiC UV photodetectors
- 2012
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Ingår i: Phys. Status Solid. ; c9:7, s. 1680-2
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Tidskriftsartikel (refereegranskat)
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| 10. |
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