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Träfflista för sökning "WFRF:(Esteve J) srt2:(2000-2004)"

Sökning: WFRF:(Esteve J) > (2000-2004)

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  • Forsen, E, et al. (författare)
  • Fabrication of cantilever based mass sensors integrated with CMOS using direct write laser lithography on resist
  • 2004
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 15:10, s. 628-633
  • Tidskriftsartikel (refereegranskat)abstract
    • A CMOS compatible direct write laser lithography technique has been developed for cantilever fabrication on pre-fabricated standard CMOS. We have developed cantilever based sensors for mass measurements in vacuum and air. The cantilever is actuated into lateral vibration by electrostatic excitation and the resonant frequency is detected by capacitive readout. The device is integrated on standard CMOS circuitry. In the work a new direct write laser lithography (DWL) technique is introduced. This laser lithography technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of poly(methyl methacrylate) (PMMA) on lift-off resist (LOR). Laser writing evaporates the PMMA, exposing the LOR. A resist solvent is used to transfer the pattern down to the substrate. Metal lift-off followed by reactive ion etching is used for patterning the structural poly-Si layer in the CMOS. The developed laser lithography technique is compatible with resist exposure techniques such as electron beam lithography. We demonstrate the fabrication of sub-micrometre wide suspended cantilevers as well as metal lift-off with feature line widths down to approximately 500 nm.
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  • Romano-Rodriguez, A., et al. (författare)
  • Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC : Structural characterization
  • 2000
  • Ingår i: Silicon Carbide and Related Materials - 1999 Pts, 1 & 2. - : Trans Tech Publications Inc.. ; , s. 309-312
  • Konferensbidrag (refereegranskat)abstract
    • In this work we present for the first time, to our knowledge, the CVD epitaxial growth of β-SiC using an ion beam synthesized (IBS) β-SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 °C. The ion beam synthesized continuous layer is constituted by β-SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
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  • Resultat 1-8 av 8

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