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Träfflista för sökning "WFRF:(Felici G.) srt2:(2003-2004)"

Sökning: WFRF:(Felici G.) > (2003-2004)

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1.
  • Buyanova, Irina, 1960-, et al. (författare)
  • Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides
  • 2004
  • Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 70:24, s. 245215-245219
  • Tidskriftsartikel (refereegranskat)abstract
    • Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.
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2.
  • Polimeni, A., et al. (författare)
  • Hydrogen related effects in diluted nitrides
  • 2003
  • Ingår i: 22nd Int. Conf. on Defects in Semiconductors,2003. - : Elsevier. ; , s. 371-
  • Konferensbidrag (refereegranskat)abstract
    • Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties. Here, some recent results on the effects that hydrogen irradiation has on the electronic properties of diluted III-N-V alloys are presented. In Ga(AsN), both the increase in the electron effective mass and exciton wave function localization induced by nitrogen are reversed in a fully controllable manner by hydrogen irradiation. In Ga(PN), hydrogen widens the band gap and exposes gradually in the gap nitrogen complex states formerly resonant with the conduction band.
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