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| 2. |
- Gunnbjornsdottir, M. I., et al.
(författare)
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Obesity and nocturnal gastro-oesophageal reflux are related to onset of asthma and respiratory symptoms
- 2004
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Ingår i: Eur Respir J. - : European Respiratory Society (ERS). ; 24:1
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Tidskriftsartikel (refereegranskat)abstract
- Several studies have identified obesity as a risk factor for asthma in both children and adults. An increased prevalence of asthma in subjects with gastro-oesophageal reflux (GOR) and obstructive sleep apnoea syndrome has also been reported. The aim of this investigation was to study obesity, nocturnal GOR and snoring as independent risk factors for onset of asthma and respiratory symptoms in a Nordic population. In a 5-10 yr follow-up study of the European Community Respiratory Health Survey in Iceland, Norway, Denmark, Sweden and Estonia, a postal questionnaire was sent to previous respondents. A total of 16,191 participants responded to the questionnaire. Reported onset of asthma, wheeze and night-time symptoms as well as nocturnal GOR and habitual snoring increased in prevalence along with the increase in body mass index (BMI). After adjusting for nocturnal GOR, habitual snoring and other confounders, obesity (BMI >30) remained significantly related to the onset of asthma, wheeze and night-time symptoms. Nocturnal GOR was independently related to the onset of asthma and in addition, both nocturnal GOR and habitual snoring were independently related to onset of wheeze and night-time symptoms. This study adds evidence to an independent relationship between obesity, nocturnal gastro-oesophageal reflux and habitual snoring and the onset of asthma and respiratory symptoms in adults.
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| 4. |
- Danielsson, Erik, et al.
(författare)
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Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
- 2002
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 389-393:2, s. 1337-1340
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Tidskriftsartikel (refereegranskat)abstract
- Silicon Carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximmn current gain of approximately 10 times, and a breakdown voltage of up to 600 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 °C, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. Physical device simulations have been used to analyze the measured data. The thermal conductivity is fitted to model the measured self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
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| 8. |
- Forsberg, U., et al.
(författare)
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Aluminum doping of epitaxial silicon carbide
- 2003
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 253:04-jan, s. 340-350
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Tidskriftsartikel (refereegranskat)abstract
- Intentional doping of aluminum in 4H and 6H SiC has been performed using a hot-wall CVD reactor. The dependence of aluminum incorporation on temperature, pressure, C/Si ratio, growth rate, and TMA flow has been investigated. The aluminum incorporation showed to be polarity dependent. The high aluminum incorporation on the Si-face is closely related to the carbon coverage on the SiC surface. Changes in process parameters changes the effective C/Si ratio close to the SiC surface. Increased growth rate and C/Si ratio increases the aluminum incorporation on the Si-face. Diffusion limited incorporation occurs at high growth rate. Reduced pressure increases the effective C/Si ratio, and at low growth rate, the aluminum incorporation increases initially, levels off at a critical pressure, and continues to decrease below the critical pressure. The aluminum incorporation showed to be constant in a temperature range of 50degreesC. The highest atomic concentration of aluminum observed in this study was 3 x 10(17) and 8 x 10(18) cm(-3) in Si and C-face, respectively.
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| 9. |
- Forsberg, U, et al.
(författare)
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Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD; Effect of process parameters
- 2002
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS. ; , s. 203-206
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Konferensbidrag (refereegranskat)abstract
- Intentional p-type doping of SiC has been performed by using trimethylaluminum as dopant source. A comprehensive investigation of the aluminum incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor has been made. The incorporation mechanism for 4H and 6H-SiC both for Si- and C-face material is presented.
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| 10. |
- Forsberg, U., et al.
(författare)
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Growth and characterisation of 4H-SiC MESFET structures grown by hot-wall CVD
- 2001
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Ingår i: Materials Research Society Symposium - Proceedings. - Boston, MA. ; , s. H2.3.1-H2.3.6
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Konferensbidrag (refereegranskat)abstract
- Metal semiconductor field effect transistor, MESFET, structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen as dopant sources, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these structures has been performed by using scanning electron microscopy, secondary ion mass spectrometry, capacitance-voltage measurements. Each technique is discussed concerning its advantage and disadvantage. Some transistor properties of MESFETs processed on the grown material are presented.
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