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Träfflista för sökning "WFRF:(Fortunato G.) srt2:(2004)"

Sökning: WFRF:(Fortunato G.) > (2004)

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1.
  • Monakhov, E., et al. (författare)
  • Boron-enhanced diffusion in excimer laser annealed Si
  • 2004
  • Ingår i: Materials Science & Engineering. - : Elsevier BV. - 0921-5107 .- 1873-4944. ; 114-15, s. 114-117
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10(16) cm(-2) forming a distribution with a width of 20-30nm and a peak concentration of similar to5 x 10(21) cm(-3). It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm(2) results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (similar to10(21) cm(-3)) exceeding the solid solubility level. RTA (30 s at 1100degreesC) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 x 10(20) cm(-3)). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed.
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2.
  • Monakhov, E. V., et al. (författare)
  • Excimer laser annealing of shallow As and B doped layers
  • 2004
  • Ingår i: Materials Science & Engineering. - : Elsevier BV. - 0921-5107 .- 1873-4944. ; 114-15, s. 352-357
  • Tidskriftsartikel (refereegranskat)abstract
    • Excimer laser annealing (ELA) of As-, B- and BF2-implanted Si has been studied by secondary ion mass spectrometry (SIMS), spreading resistance probe (SRP) and transmission electron microscopy (TEM). The implantations have been performed in the energy range from I to 30 keV with doses of 10(15)-10(16) cm(-2). ELA has been carried out with the energy densities in the range of 600-1200 mJ/cm(2) and the number of laser pulses from 1 to 10. It is shown that ELA results in a more uniform dopant distribution over the doped region with a more abrupt profile edge as compared to those after rapid thermal annealing (RTA). Besides, in contrast to RTA, ELA demonstrates a highly confined annealing effect, where the distribution of dopants below the melting region is not affected. SRP measurements demonstrate almost complete activation of the implanted dopants after ELA, and TEM does not reveal extended defects in the ELA-treated samples. The depth of the doped layers, abruptness of the profiles and the total doping dose as a function of ELA energy density and number of laser pulses are investigated. Computer simulations of ELA show a good agreement with the experimental data.
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  • Resultat 1-2 av 2
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tidskriftsartikel (2)
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refereegranskat (2)
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Svensson, B. G. (2)
Linnarsson, Margaret ... (2)
La Magna, A (2)
Privitera, V. (2)
Fortunato, G. (2)
Mariucci, L. (2)
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Monakhov, E. V. (1)
Monakhov, E (1)
Camalleri, M. (1)
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Kungliga Tekniska Högskolan (2)
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