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| 2. |
- Enfors, Sven-Olof, et al.
(författare)
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Physiological responses to mixing in large scale bioreactors
- 2001
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Ingår i: Journal of Biotechnology. - 0168-1656 .- 1873-4863. ; 85:2, s. 175-185
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Tidskriftsartikel (refereegranskat)abstract
- Escherichia coli fed-batch cultivations at 22 m(3) scale were compared to corresponding laboratory scale processes and cultivations using a scale-down reactor furnished with a high-glucose concentration zone to mimic the conditions in a feed zone of the large bioreactor. Formate accumulated in the large reactor, indicating the existence of oxygen limitation zones. It is suggested that the reduced biomass yield at large scale partly is due to repeated production/reassimilation of acetate from overflow metabolism and mixed acid fermentation products due to local moving zones with oxygen limitation. The conditions that generated mixed-acid fermentation in the scale-down reactor also induced a number of stress responses, monitored by analysis of mRNA of selected stress induced genes. The stress responses were relaxed when the cells returned to the substrate limited and oxygen sufficient compartment of the reactor. Corresponding analysis in the large reactor showed that the concentration of mRNA of four stress induced genes was lowest at the sampling port most distant from the feed zone. It is assumed that repeated induction/relaxation of stress responses in a large bioreactor may contribute to altered physiological properties of the cells grown in large-scale bioreactor. Flow cytometric analysis revealed reduced damage with respect to cytoplasmic membrane potential and integrity in cells grown in the dynamic environments of the large scale reactor and the scale-down reactor.
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| 4. |
- Arlat, Jean, et al.
(författare)
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Comparison of Physical and Software-Implemented Fault Injection Techniques
- 2003
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Ingår i: IEEE Transactions on Computers. - 0018-9340. ; 52:9, s. 1115-1133
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Tidskriftsartikel (refereegranskat)abstract
- This paper addresses the issue of characterizing the respective impact of fault injection techniques. Three physical techniques and one software-implemented technique that have been used to assess the fault tolerance features of the MARS fault-tolerant distributed real-time system are compared and analyzed. After a short summary of the fault tolerance features of the MARS architecture and especially of the error detection mechanisms that were used to compare the erroneous behaviors induced by the fault injection techniques considered, we describe the common distributed testbed and test scenario implemented to perform a coherent set of fault injection campaigns. The main features of the four fault injection techniques considered are then briefly described and the results obtained are finally presented and discussed. Emphasis is put on the analysis of the specific impact and merit of each injection technique.
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| 6. |
- Henschel, W, et al.
(författare)
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Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates
- 2004
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:5, s. 739-745
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Tidskriftsartikel (refereegranskat)abstract
- A dual gate metal oxide semiconductor field effect transistor (MOSFET) with electrically variable shallow junctions (EJ-MOSFET) has been fabricated on silicon on insulator (SOI) substrates. This kind of transistor allows testing the limits of scalability at relaxed process requirements. Transistor gate lengths down to 12 run have been structured by electron beam lithography (EBL) and specific etching processes. The coupling of the upper gate to the inner transistor is carefully investigated.
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| 7. |
- Henschel, W, et al.
(författare)
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Fabrication of 12 nm electrically variable shallow junction metal-oxide-semiconductor field effect transistors on silicon on insulator substrates
- 2003
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 21:6, s. 2975-2979
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Tidskriftsartikel (refereegranskat)abstract
- Electrically variable shallow junction metal-oxide-semiconductor field effect transistors on silicon on insulator have been fabricated to evaluate the suitability of fabrication processes on a nanoscale. In addition, the limits of scalability have been explored reducing gate lengths down to 12 nm. Specific attention has been paid to the overlay accuracy as required for the fabrication of these double gate structures. The superior quality of hydrogen silsesquioxane (HSQ) as electron beam resist and as mask material is demonstrated. The transistor fabricated exhibits extremely low leakage currents and relatively high on currents. The 8 orders of magnitude difference between the on and off states demonstrates conclusively large potentials for metal-oxide-semiconductor structures with critical dimensions in the 10 nm regime. (C) 2003 American Vacuum Society.
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| 9. |
- Vratzov, B, et al.
(författare)
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Large scale ultraviolet-based nanoimprint lithography
- 2003
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 21:6, s. 2760-2764
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Tidskriftsartikel (refereegranskat)abstract
- Limits in resolution and accuracy of large scale ultraviolet (UV)-based nanoimprint lithography using rigid quartz molds and spin coated UV curable resists are presented. The resolution and precision parameters are closely followed from pattern in the mold through imprints in the resist and finally compared with structures transferred into silicon by special etching processes. Specific attention is paid to the simultaneous patterning of nano and microscale structures. The applicability for functional nanoelectronic components is demonstrated by the fabrication of an NMOS transistor based on SOL whose channel width is reduced to 50 nm. (C) 2003 American Vacuum Society.
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