| 1. |
- Bernard, C., et al.
(författare)
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Semileptonic kaon decay in staggered chiral perturbation theory
- 2014
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Ingår i: Physical Review D (Particles, Fields, Gravitation and Cosmology). - 1550-2368. ; 89:5
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Tidskriftsartikel (refereegranskat)abstract
- The determination of vertical bar V-us vertical bar from kaon semileptonic decays requires the value of the form factor f(+)(q(2) = 0), which can be calculated precisely on the lattice. We provide the one-loop partially quenched staggered chiral perturbation theory expressions that may be employed to analyze staggered simulations of f(+)(q(2)) with three light flavors. We consider both the case of a mixed action, where the valence and sea sectors have different staggered actions, and the standard case, where these actions are the same. The momentum transfer q(2) of the form factor is allowed to have an arbitrary value. We give results for the generic situation where the u, d, and s quark masses are all different, N-f = 1 + 1 + 1, and for the isospin limit, N-f = 2 + 1. The expression we obtain for f(+)(q(2)) is independent of the mass of the ( valence) spectator quark. In the limit of vanishing lattice spacing, our results reduce to the one-loop continuum partially quenched expression for f(+)(q(2)), which has not previously been reported in the literature for the N-f = 1 + 1 + 1 case. Our expressions have already been used in staggered lattice analyses of f(+)(0) and should prove useful in future calculations as well.
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| 2. |
- Donetti, L., et al.
(författare)
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Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 110:6, s. 063711-
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Tidskriftsartikel (refereegranskat)abstract
- We explore the possibility to define an effective mass parameter to describe hole transport in inversion layers in bulk MOSFETs and silicon-on-insulator devices. To do so, we employ an accurate and computationally efficient self-consistent simulator based on the six-band k . p model. The valence band structure is computed for different substrate orientations and silicon layer thicknesses and is then characterized through the calculation of different effective masses taking account of the channel direction. The effective masses for quantization and density of states are extracted from the computed energy levels and subband populations, respectively. For the transport mass, a weighted averaging procedure is introduced and justified by comparing the results with hole mobility from experiments and simulations.
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| 3. |
- Donetti, L., et al.
(författare)
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On the effective mass of holes in inversion layers
- 2011
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Ingår i: International Conference on Ultimate Integration on Silicon. - 9781457700903 ; , s. 50-53
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Konferensbidrag (refereegranskat)abstract
- We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band kp model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.
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| 4. |
- Thomas, S. M., et al.
(författare)
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On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 110:12, s. 124503-
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the impact of the local and remote Coulomb scattering mechanisms on electron and hole mobility are investigated. The effective mobilities in quasi-planar finFETs with TiN/Hf(0.4)Si(0.6)O/SiO(2) gate stacks have been measured at 300 K and 4 K. At 300 K, electron mobility is degraded below that of bulk MOSFETs in the literature, whereas hole mobility is comparable. The 4 K electron and hole mobilities have been modeled in terms of ionized impurity, local Coulomb, remote Coulomb and local roughness scattering. An existing model for remote Coulomb scattering from a polycrystalline silicon gate has been adapted to model remote Coulomb scattering from a high-kappa/SiO(2) gate stack. Subsequently, remote charge densities of 8 x 10(12) cm(-2) at the Hf(0.4)Si(0.6)O/SiO(2) interface were extracted and shown to be the dominant Coulomb scattering mechanism for both electron and hole mobilities at 4 K. Finally, a Monte Carlo simulation showed remote Coulomb scattering was responsible for the degraded 300 K electron mobility.
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