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Low temperature transport of Al into and through copper starting with Cu/Al/SiO2 bilayers
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Ingår i: JOURNAL OF APPLIED PHYSICS. - : AMER INST PHYSICS. - 0021-8979. ; 85:3, s. 1487-1495
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The transport of Al into Cu is studied by annealing Cu/Al/SiO2 bilayers. In order to minimize the effects of contaminants, samples were prepared and annealed in all-metal ultrahigh vacuum systems. In situ resistivity was used to continuously monitor the t
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