1. |
- Dzibrou, Dzmitry, 1984-
(författare)
-
Complex Oxide Photonic Crystals
- 2009
-
Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Microphotonics has been offering a body of ideas to prospective applicationsin optics. Among those, the concept of photonic integrated circuits (PIC’s) has recently spurred a substantial excitement into the scientific community. Relisation of the PIC’s becomes feasible as the size shrinkage of the optical elements is accomplished. The elements based on photonic crystals (PCs) represent promising candidacy for manufacture of PIC’s. This thesis is devoted to tailoring of optical properties and advanced modelling of two types of photonic crystals: (Bi3Fe5O12/Sm3Ga5O12)m and (TiO2/Er2O3)m potentially applicable in the role optical isolators and optical amplifiers, respectively. Deposition conditions of titanium dioxide were first investigated to maximise refractive index and minimise absorption as well as surface roughness of titania films. It was done employing three routines: deposition at elevated substrate temperatures, regular annealing in thermodynamically equilibrium conditions and rapid thermal annealing (RTA). RTA at 500 oC was shown to provide the best optical performance giving a refractive index of 2.53, an absorption coefficient of 404 cm−1 and a root-mean-square surface roughness of 0.6 nm. Advanced modelling of transmittance and Faraday rotation for the PCs (Bi3Fe5O12/Sm3Ga5O12)5 and (TiO2/Er2O3)6 was done using the 4 × 4 matrix formalism of Višňovský. The simulations for the constituent materials in the forms of single films were performed using the Swanepoel and Višňovský formulae. This enabled generation of the dispersion relations for diagonal and off-diagonal elements of the permittivity tensors relating to the materials. These dispersion relations were utilised to produce dispersion relations for complex refractive indices of the materials. Integration of the complex refractive indices into the 4 × 4 matrix formalism allowed computation of transmittance and Faraday rotation of the PCs. The simulation results were found to be in a good agreement with the experimental ones proving such a simulation approach is an excellent means of engineering PCs.
|
|
2. |
- Emelchenko, G., et al.
(författare)
-
1.5 μm photoluminescence of Er3+ in opal based photonic crystals
- 2008
-
Ingår i: Proc SPIE Int Soc Opt Eng. - : SPIE. - 9780819471871
-
Konferensbidrag (refereegranskat)abstract
- The study of the emission properties of opal-erbium oxide nanocomposites in the wide range of erbium concentrations was carried out. Erbium oxide concentration was varied from 0.25 to 16%wt. Maximal output of the photoluminescence (PL) took place at 1%wt of erbium oxide concentration. It was shown that the annealing temperatures from 600 to 900°C were too low to exhibit sufficient emission properties of the erbium-opal composites. The presence of the erbium silicates Er2SiO5 and Er 2Si2O7 in the opal-erbium nanocomposites was revealed by X-ray phase analysis. Amorphous silica in opal matrix was not crystallized at the annealing during a few hours at 1000 - 1200°C. The case of the tens hours of annealing the crystoballite phase occurred. No angle dependence of the PL intensity was observed as a result of degradation of the photonic band gap (PBG) at the annealing of the opal-erbium oxide nanocomposites. Further modification of the material processing to achieve a strong photonic band gap reflection peak near 1550 nm with high PL intensity in the opal-Er2O3 composite is running.
|
|
3. |
- Grishin, Alex M.
(författare)
-
Multifunctional oxides on Si
- 2005
-
Ingår i: Proc. Electrochem. Soc.. ; , s. 482-497
-
Konferensbidrag (refereegranskat)abstract
- We review the projects ongoing at the Royal Institute of Technology on engineering and application of novel oxides on Si platform. Colossal magnetoresistance (CMR) in La 1-x(Sr,Ca,Pb) xMnO 3 films grown on Si has been tailored to room temperature to make a prototype of uncooled IR bolometer. Demonstrator of ferroelectric PZT/SiC field effect transistor operates at temperatures up to 300 °C. Ferroelectric niobate (Na,K)NbO 3 films have been sintered and found to be feasible for biomedical, microwave and electro-optical applications.
|
|
4. |
- Kawasaki, Hiroharu, et al.
(författare)
-
TiO2/TiN/TiO2 heat mirrors by laser ablation of single TiN target
- 2008
-
Ingår i: Journal of Physics, Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 100:1, s. 012038-
-
Tidskriftsartikel (refereegranskat)abstract
- Titanium oxide (TiO2 ) and titanium nitride (TiN) multilayered films grown by pulsed laser deposition (PLD) technique have been tested as a heat mirror, which have a high transmittance in the visible region and a high reflectance in the infrared. Three layer TiO2 /TiN/TiO2 heat mirrors were grown on Corning glass substrates ablating single TiN target. Switching of TiO2 -to-TiN layers composition was achieved by changing gas atmosphere (oxygen-to-nitrogen). Grown TiO2 /TiN/TiO2 heat mirrors are highly transparent in visible (above 60% at 525nm), opaque in infrared (10% at 2600nm) and in the range from 400 nm to 2600 nm they possess almost the same properties as films prepared using two targets: TiO2 and TiN. XPS confirms similarity of chemical composition of multilayered TiO2 /TiN films prepared by single TiN and two TiO2 and TiN targets techniques. Furthermore, multifunctional self cleaning properties of TiO2 /TiN heat mirrors are expected through the precise control of the composition of the top TiO2 layer operating as a photocatalyst.
|
|
5. |
- Kim, Jang-Yong
(författare)
-
Novel tantalate-niobate films for microwaves
- 2005
-
Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Microwave materials have been widely used in a variety of applications ranging from communication devices to military satellite services, and the study of materials properties at microwave frequencies and the development of functional microwave materials have always been among the most active areas in solid-state physics, materials science, and electrical and electronic engineering. In recent years, the increasing requirements for the development of high speed, high frequency circuits and systems require complete understanding of the properties of materials function at microwave frequencies. Ferroelectric materials usually have high dielectric constants, and their dielectric properties are temperature and electric field dependent. The change in permittivity as a function of electric field is the key to a wide range of applications. Ferroelectric materials can be used in fabrication capacitors for electronic industry because of their high dielectric constants, and this is important in the trend toward miniaturization and high functionality of electronic products. The simple tunable passive component based on ferroelectric films is a varactor which can be made as a planar structure, and electrically tunable microwave integrated circuits using ferroelectric thin films can be developed. Therefore, it is very important to characterize the dielectric constant and tunability of ferroelectric thin films. This thesis shows experimental results for growth, crystalline properties and microwave characterization of Na0.5K0.5NbO3 (NKN), AgTa0.5Nb0.5O3 (ATN), Ba0.5Sr0.5TiO3 (BST) as well as AgTaO3 (ATO), AgNbO3 (ANO) thin films. The films were grown by Pulsed Laser Deposition (PLD) and rf-magnetron sputtering of a stoichiometric, high density, ceramic NKN, ATN, BST target onto single crystal LaAlO3(LAO), Al2O3 (sapphire), and Nd:YAlO3, and amorphous glass substrates. By x-ray diffractometry, NKN, ATN, BST films on LAO substrates were found to grow epitaxially, whereas films on r-cut sapphire substrates were found to be preferentially (00l) oriented. Coplanar waveguide interdigital capacitor (CPWIDC) structures were fabricated by standard photolithography processing and metal lift-off technique. Microwave properties of the NKN/Sapphire and ATN/Sapphire with CPW structures were characterized using on-wafer microwave measurement technique. Measurement setup is composed of network analyzer, probe station, and microwave G-S-G probes. External electric field through the connection between network analyzer and power supply was applied to measure voltage tunability. Measured S-parameter were used for the calculation of capacitance, loss tanδ, tunability and K-factor. The NKN films interdigital capacitors with 2 μm finger gap on Nd:YAlO3 showed superior performance compared to ATN in the microwave range from 1 to 40 GHz. Within this range, the voltage tunability (40V, 200 kV/cm) was about 29%, loss tangent ∼ 0.13, K-factor = tunability/tanδ from 152% @ 10GHz to 46% @ 40GHz. The microwave performance of ATN film CPWIDC with 2 μm finger gap on sapphire substrate in the microwave range from 1 to 40 GHz showed that frequency dispersion is about 4.3%, voltage tunability was 4.7% @ 20GHz and 200 kV/cm, loss tangent ∼ 0.068 @ 20GHz, K-factor = tunability/tanδ is ranged from 124% @ 10GHz to 35% @ 40GHz. The BST films CPWIDC with 2μmfinger gap on Al2O3 substrate showed frequency dispersion of capacitance in the microwave range from 1 to 40 GHz about 17%, voltage tunability = 1 - C(40V)/C(0) ∼ 22.2%, loss tangent ∼ 0.137 @ 20GHz, and K-factor = tunability/tanδ from 281% @ 10GHz to 95% @ 40GHz.
|
|
6. |
- Timopheev, A. A., et al.
(författare)
-
Effect of interaction in the magnetization reversal relaxation of superparamagnetic granulaR CoFeB -SiO2 FILMS
- 2009
-
Ingår i: Magnetism and Magnetic Materials. - : Scientific.Net. ; , s. 213-216
-
Konferensbidrag (refereegranskat)abstract
- In order to study the magnetic interactions influence on the relaxation processes in superparamagnetic media, the magnetostatic measurements were carried out for the granular (CoFeB)x-(SiO2)1-x films with x values near percolation threshold. The observed temperature dependences of the coercivity for the samples magnetized along in-plane easy axis have shown two parts linear on √T with different inclination angles, which cross each other at the blocking temperature (Tb). The first part of the curve, which corresponds to the temperature range below T b, depends on the measuring time and is related to the thermal activation nature of magnetization reversal process in the blocked superparamagnetic state. Second part of the curve, which corresponds to the temperature range above Tb, is practically independent on the measuring time and is related to existence of correlated state of superparamagnetic grains moments, i.e. to superferromagnetic state. The method of the magnetization reversal curves simulation based on the numerical solving of kinetic equation has been applied to explain the experimental results.
|
|
7. |
- Tkatch, V. I., et al.
(författare)
-
Estimation of the heat transfer coefficient in melt spinning process
- 2009
-
Ingår i: Journal of Physics, Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 144, s. 012104-
-
Tidskriftsartikel (refereegranskat)abstract
- Effect of the quenching wheel velocity in the range 20.7-26.5 m/s on the cooling rate as well as on the structure and microtopology of the contact surfaces of the glass-forming FeNiPB melt-spun ribbons has been experimentally studied. Both the values of the cooling rate and heat transfer coefficient at the wheel-ribbon interface estimated from the temperature vs. time curves recorded during melt spinning runs are in the ranges (1.6-5.2)×10 6 K/s and (2.8-5.2)×10 5 Wm -2K -1, respectively, for ribbon thicknesses of 31.4-22.0 μm. It was found that the density of the air pockets at the underside surface of ribbons decreases while its average depth remains essentially unchanged with the wheel velocity. Using the surface quality parameters the values of the heat transfer coefficient in the areas of direct ribbon-wheel contact were evaluated to be ranging from 5.75 to 6.65×10 5 Wm -2K -1.
|
|