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- Khranovskyy, V., et al.
(författare)
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PEMOCVD of ZnO thin films, doped by Ga and some of their properties
- 2006
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Ingår i: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036 .- 1096-3677. ; 39:1-4, s. 275-281
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Tidskriftsartikel (refereegranskat)abstract
- Zinc oxide (ZnO) is a promising semiconductor material with a great variety of applications, for example for highly conductive films for transparent electronics. Recently, Ga has been proposed as a dopant, exhibiting the advantages of a very similar atomic radius compared to Zn, a smaller reactivity, and a higher resistivity to oxidation compared to its competitor Al. In this study ZnO films, doped by Ga, were produced on Al2O3(0001) substrates by PEMOCVD. The doping was realized with 1, 3, 5 and 10 wt% gallium precursor content in the mixture. The resistivity of the prepared films, as well as the morphology and the transmittance, was investigated. All the deposited films have demonstrated a high optical transmittance above 93% in the range between 400 and 800 nm. A strong correlation between the electrical resistivity and the optical band gap depending on the Ga content was observed. An AFM analysis demonstrated highly uniform and smooth surfaces. The average grain size and route mean square roughness decreased with increasing Ga content. © 2005 Elsevier Ltd. All rights reserved.
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| 2. |
- Khranovskyy, V., et al.
(författare)
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Structural and morphological properties of ZnO : Ga thin films
- 2006
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:2 SPEC. ISS., s. 472-476
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Tidskriftsartikel (refereegranskat)abstract
- Zinc oxide (ZnO) is a promising semiconductor material with a great variety of applications. Compared to undoped ZnO, impurity-doped ZnO has a lower resistivity and better stability. With this aim, Ga has been proposed as a dopant. In this study, the structural characteristics and surface morphology of ZnO films produced by PEMOCVD at a substrate temperature of 250 °C on the c-plane (001) of sapphire were investigated. Doping was realized with 1, 3, 5 and 10 wt.% of Ga2(AA)3 in the precursor's mixture. At lower contents, Ga stimulates growth of (002) oriented textured films and the smallest FWHM was obtained as low as 0.17° for ZnO:Ga with 1 wt.%. A change in preferential orientation as well as surface smoothing and roughness decreasing of the films were observed with further increasing Ga content in precursor's mixture. We assume a key role of Ga and note that such a feature would be beneficial for the application of ZnO thin films for formation of abrupt junctions in p-n device structures. © 2005 Elsevier B.V. All rights reserved.
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| 3. |
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| 4. |
- Svensson, B.G., et al.
(författare)
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Ion implantation processing and related effects in SiC
- 2006
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Ingår i: Silicon Carbide and Related Materials 2005, Pts 1 and 2. - 9780878494255 ; , s. 781-786
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Konferensbidrag (refereegranskat)abstract
- A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p(+)-doped layers, and deactivation of N donors by ion-induced defects.
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