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| 2. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Direct carrier quadrature modulator and Demodulator MMICs for 60 GHz gigabit wireless communications
- 2011
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Ingår i: Asia-Pacific Microwave Conference Proceedings (APMC 2011; Melbourne, VIC; 5 - 8 December 2011). - 9780858259744 ; , s. 1134-1137
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- A 60 GHz direct carrier quadrature modulator is designed and fabricated in 0.15 μm mHEMT technology. The design is based on passive mixers and therefore reciprocal which makes it possible to be used both as modulator and demodulator. The modulator has an input bandwidth of 0-5 GHz on each of the I and Q ports and an RF bandwidth of 53-68 GHz. Carrier leakage to the output port is eliminated by addition of an inductive path from the LO port to the RF port. The modulator requires 5 dBm LO power and can output up to -6 dBm RF power in linear region and up to -4 dBm when driven into saturation. When operated as an SSB mixer, the conversion loss is measured to be 11 dB and image and LO signals are suppressed by as much as 30 dB compared to the desired signal. For demonstration, a pair of the presented modulator/demodulator is used to transmit 7Gbps BPSK signal over 1m and 10Gbps QPSK signal over 0.5m wireless link.
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| 3. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
- 2011
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 59:2, s. 466-478
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-mu m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the Y-factor method. The total noise temperature of 1310 +/- 100K(corresponding to an NF of 7.4 dB), including the losses in the lens and antenna, is measured at 220 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.
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| 4. |
- Chen, Jingjing, 1982, et al.
(författare)
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10 Gbps 16QAM transmission over a 70/80 GHz (E-band) radio test-bed
- 2012
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Ingår i: European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. - : IEEE. - 9782874870286 - 9781467323024 - 9782874870262 ; , s. 556-559
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Konferensbidrag (refereegranskat)abstract
- A millimeter-wave radio test-bed is implemented which demonstrates 16QAM transmission over 70/80 GHz band for data rate up to 10 Gbps. Performance of the 16QAM transmitter and receiver is evaluated in a loop-back lab set-up. With the proposed 10 Gbps on single carrier system architecture, it is possible to achieve 40 Gbps over a 5 GHz bandwidth when combined with polarization and spatial multiplexing.
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| 5. |
- Eriksson, Klas, 1983, et al.
(författare)
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Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology
- 2014
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Ingår i: IEEE Transactions on Terahertz Science and Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-342X .- 2156-3446. ; 4:1, s. 56-64
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Tidskriftsartikel (refereegranskat)abstract
- Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
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| 6. |
- Gavell, Marcus, 1981, et al.
(författare)
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A 53 GHz single chip receiver for geostationary atmospheric measurements
- 2011
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Ingår i: 33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011. - 1550-8781. - 9781612847122
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Konferensbidrag (refereegranskat)abstract
- This paper presents the design and characterization of a multifunctional receiver with integrated x4 frequency multiplier for the LO generation, image reject mixer and low noise amplifier into a single chip MMIC. Noise figure has been measured to 4.6 dB and power consumption to 140 mW. The image rejection is better than 47 dB, conversion gain 10 dB and IIP3 -12 dBm. This performance is far superior to any comparable existing published 53 GHz receiver. The process used is commercially available 0.15 μm GaAs mHEMT technology featuring ft=120 GHz and fmax=200 GHz.
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| 7. |
- Gavell, Marcus, 1981, et al.
(författare)
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A linear 70-95 GHz differential IQ modulator for E-band wireless communication
- 2010
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Ingår i: IEEE MTT-S International Microwave Symposium Digest ; 2010 IEEE MTT-S International Microwave Symposium, MTT 2010; Anaheim, CA; 23 May 2010 through 28 May 2010. - 0149-645X. - 9781424477326 ; , s. 788-791
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 8. |
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| 9. |
- Svedin, Jan, et al.
(författare)
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An experimental 210 GHz radar system for 3D stand-off detection
- 2010
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Ingår i: 35th International Conference on Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010. - 9781424466559
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Konferensbidrag (refereegranskat)abstract
- A 210 GHz radar system for studies of personscanning at stand-off distances is presented. The radar uses amechanically scanned RX front-end based on an antennaintegratedMMIC. The TX part is based on an HBV quintupler.Image data formation is made using the FMCW and SARprinciples.
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| 10. |
- Vassilev, Vessen, 1969, et al.
(författare)
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Integrated front-ends up to 200 GHz
- 2011
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Ingår i: 2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Sitges, 15 September 2011 through 16 September 2011. - 9781612849652 ; , s. 57-60
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present results of work done in packaging highly integrated circuits based on 100nm mHEMT technology. We present several examples of fully integrated receivers and sources for frequencies bands 90-130 GHz and 160-210 GHz. The circuits are packaged into waveguide blocks, characterized and compared to on-wafer measurements. Waveguide to microstrip transitions based on 50 um alumina substrate, and including via holes, are used to effectively interface the MMICs to a rectangular waveguide at RF without using tuning structures to resonate wire-inductance. Noise and return loss are characterized on wafer and after packaging. Typical increase of 0.7 dB in the NF is observed at 90-130 GHz after the packaging and 1 dB at 160-210 GHz. We address the issue of MMICs with high level of integration resulting in large cavities in the package causing instabilities for certain biasing conditions. Some of the packaged modules are characterized at both room and cryogenic temperatures. © 2011 IEEE.
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