| 1. |
- Chen, Jingjing, 1982, et al.
(författare)
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Influence of White LO Noise on Wideband Communication
- 2018
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 66:7, s. 3349-3359
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Tidskriftsartikel (refereegranskat)abstract
- Applying a spectrally efficient modulation to a wideband signal provides an extremely high data rate potential in millimeter-wave communication. In reality, wideband systems, as reported in open literature, typically suffer from insufficient signal-to-noise ratio (SNR) and thus are not able to support high-order modulation. In a recent experimental study, we have identified that a high noise floor from frequency-multiplied local oscillator (LO) sources is a major data rate limitation in wideband systems. In this paper, we present a detailed study with a mathematical model to describe the influence of the LO noise on a communication signal through frequency conversion. Followed by experimental investigations using multigigabit 64-quadrature amplitude modulation signals, measurements are performed at frequency up- and down-conversions. Both cases show SNR degradation on the frequency-converted signals as the corresponding LO noise floor increases. We provide experimental proof that the nature of the LO noise floor is white, with nearly the same amount of phase and amplitude noises. Various ways to reduce the white LO noise floor through the new hardware design are discussed providing design requirements and considerations.
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| 2. |
- Eriksson, Klas, 1983, et al.
(författare)
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InP DHBT Amplifier Modules Operating Between 150 and 300 GHz Using Membrane Technology
- 2015
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 63:2, s. 433-440
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we present WR05 (140-220 GHz) and WR03 (220-325 GHz) five-stage amplifier modules with novel membrane microstrip-to-waveguide transitions. The modules use a 250-nm InP double heterojunction bipolar transistor (DHBT) technology and multilayer thin-film microstrip transmission lines. The waveguide transitions use E-plane probes on 3- μm-thin GaAs membrane substrate. Beam lead connectors integrated on the transition eliminate the need of highly reactive bond wires. In addition, process steps such as backside metallization, backside vias, and nonrectangular dicing of the integrated circuits (ICs) are not required. The WR05 amplifier module demonstrates a peak gain of 24 dB at 245 GHz and more than 10-dB gain from 155 to 270 GHz. The WR-03 module has 19-dB gain from 230 to 254 GHz with input and output return loss better than 10 dB from 225 to 330 GHz. The two modules were also characterized in terms of noise. The minimum noise figures were measured to 9.7 dB at 195 GHz and 10.8 dB at 240 GHz for the WR05 and WR03 modules, respectively. To the authors' best knowledge, these are the first published results on an InP DHBT amplifier modules operating at these high frequencies. It is also the first time that membrane technology is used for IC packaging, regardless of IC technology.
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| 3. |
- Eriksson, Klas, 1983, et al.
(författare)
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Suppression of Parasitic Substrate Modes in Multilayer Integrated Circuits
- 2015
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Ingår i: IEEE Transactions on Electromagnetic Compatibility. - 0018-9375 .- 1558-187X. ; 57:3, s. 591-594
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Tidskriftsartikel (refereegranskat)abstract
- Integrated circuits (ICs) with multilayer backend process and a large front-side ground plane support the propagation of parasitic substrate modes. These modes resonate at frequencies that typically are within the bandwidth of circuits operating close to and in the submillimeter-wave range, i.e., beyond 300 GHz. The resonances cause unwanted coupling and feedback, which result in circuit instability and degraded performance for circuits operating in the range of these resonances. A common method to suppress these modes from propagating is to use numerous through-wafer vias distributed over the entire circuit. In this letter, we present a study of substrate modes in multilayer ICs with thin-film microstrip interconnects at 125-330 GHz. We show that a doped Si carrier underneath the circuit effectively eliminates the effect of substrate modes on the circuit functionality. This method requires no backside processed through-wafer vias and no backside metallization.
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| 4. |
- Gavell, Marcus, 1981, et al.
(författare)
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Design and Analysis of a Wideband Gilbert Cell VGA in 0.25 um InP DHBT Technology With DC-40-GHz Frequency Response
- 2017
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 65:10, s. 3962-3974
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Tidskriftsartikel (refereegranskat)abstract
- A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- μ m InP double heterojunction bipolar transistor technology with fT/f max of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single -7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 mm^2. We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias
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| 5. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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Demonstration of +100-GHz Interconnects in eWLB Packaging Technology
- 2019
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Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 9:7, s. 1406-1414
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents waveguide interconnects implemented in an embedded wafer level ball grid array (eWLB) packaging technology. The interconnects operate at D-band (110–170 GHz), hence are enabling the realization and commercialization of high-data-rate systems. The interconnects rely on implementing radiating structures on the technology’s redistribution layers instead of using conventional ball grid arrays for the transmission of the RF signal to/from the package. The interconnects interface with standard WR-6.5 waveguides. Moreover, they do not require any galvanic contacts with the waveguide. The interconnects achieve a measured insertion loss of 2.8 dB over a bandwidth of 33%. The adopted eWLB packaging technology is suitable for low-cost high-volume production and allows heterogeneous integration with other technologies. This paper proposes cost-effective high-performance interconnects for THz integration, thus addressing one of the main challenges facing systems operating beyond 100 GHz.
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| 6. |
- Yan, Yu, 1984, et al.
(författare)
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A 110-170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology
- 2015
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 63:9, s. 2897-2904
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Tidskriftsartikel (refereegranskat)abstract
- A novel full D-band (110-170 GHz) multi-mode transconductance down-converter mixer is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology. A single-balanced topology is chosen and an active power combiner for the RF and the local oscillator (LO) signals’ combination is used. The designed mixer is feasible to work at ×1, ×2, ×3, ×4 subharmonically LO-pumped mixing modes with relatively low LO powers of 0, -1, 5, and 6 dBm, respectively. The measured conversion gain achieves typical values of -3, -1, -5, and -4 dB over the full D-band while the best noise figures of 12, 13.5, 18.5, and 19 dB are obtained, respectively. Through the multi-mode operation in terms of subharmonic LO-pump-frequency, the designer can make a trade-off between LO frequency, LO power, and noise figure.
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| 7. |
- Yan, Yu, 1984, et al.
(författare)
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A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications
- 2018
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 10800
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Konferensbidrag (refereegranskat)abstract
- A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of -9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6×1012 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects.
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