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Träfflista för sökning "WFRF:(Gunnarsson Sten 1976) srt2:(2020-2024)"

Sökning: WFRF:(Gunnarsson Sten 1976) > (2020-2024)

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1.
  • Bremer, Johan, 1991, et al. (författare)
  • Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
  • 2020
  • Ingår i: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 67:5, s. 1952-1958
  • Tidskriftsartikel (refereegranskat)abstract
    • This article presents an electric-based methodology for thermal characterization of semiconductor technologies. It is shown that for technologies such as gallium nitride (GaN) high electron mobility transistors, which exhibit several field induced electron trapping effects, the thermal characterization has to be performed under specific conditions. The electric field is limited to low levels to avoid activation of trap states. At the same time, the dissipated power needs to be high enough to change the operating temperature of the device. The method is demonstrated on a test structure implemented as a GaN resistor with large contact separation. It is used to evaluate the thermal properties of samples with different silicon carbide suppliers and buffer thickness.
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2.
  • Divinyi, Andreas, et al. (författare)
  • On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs
  • 2024
  • Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 14:5, s. 891-896
  • Tidskriftsartikel (refereegranskat)abstract
    • A novel approach to on-chip temperature sensors for non-invasive thermal characterization and monitoring of packaged GaN MMICs is presented. The proposed sensor is fully compatible with commercial GaN foundry processes and enables improved reliability estimation of highly integrated systems. A dedicated test structure is developed to demonstrate the capabilities of the sensor, and an accurate calibration method of its temperature response is proposed. This combination allows for continuous temperature monitoring during operation with electrical acquisition of temperature transients. The method also enables the thermal characterization of the device and package.
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  • Resultat 1-2 av 2

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