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- Kaltenbrunner Nykvist, Monica, 1975-, et al.
(författare)
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Staff perception of Lean, care-giving, thriving and exhaustion : a longitudinal study in primary care
- 2019
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Ingår i: BMC Health Services Research. - : Springer Science and Business Media LLC. - 1472-6963. ; 19:1
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Tidskriftsartikel (refereegranskat)abstract
- BackgroundLean is commonly adopted in healthcare to increase quality of care and efficiency. Few studies of Lean involve staff-related outcomes, and few have a longitudinal design. Thus, the aim was to examine the extent to which changes over time in Lean maturity are associated with changes over time in care-giving, thriving and exhaustion, as perceived by staff, with a particular emphasis on the extent to which job demands and job resources, as perceived by staff, have a moderated mediation effect.MethodA longitudinal study with a correlational design was used. In total, 260 staff at 46 primary care units responded to a web survey in 2015 and 2016. All variables in the study were measured using staff ratings. Ratings of Lean maturity reflect participants’ judgements regarding the entire unit; ratings of care-giving, thriving, exhaustion and job demands and resources reflect participants’ judgements regarding their own situation.ResultsFirst, over time, increased Lean maturity was associated with increased staff satisfaction with their care-giving and increased thriving, mediated by increased job resources. Second, over time, increased Lean maturity was associated with decreased staff exhaustion, mediated by decreased job demands. No evidence was found showing that job demands and job resources had a moderated mediation effect.ConclusionThe results indicate that primary care staff may benefit from working in organizations characterized by high levels of Lean maturity and that caregiving may also be improved as perceived by staff.
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| 2. |
- Tengdelius, Lina, et al.
(författare)
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Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power
- 2015
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Ingår i: Journal of Crystal Growth. - : ELSEVIER SCIENCE BV. - 0022-0248 .- 1873-5002. ; 430, s. 55-62
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Tidskriftsartikel (refereegranskat)abstract
- Zirconium diboride (ZrB2) thin films have been deposited on 4H-SiC(0001) substrates by direct current magnetron sputtering from a compound target. The effect of deposition temperature (500-900 degrees C) and sputtering power (100-400 W) on the composition and structure of the films have been investigated. Electron microscopy and X-ray diffraction reveal that high sputtering power values and high deposition temperatures are favorable to enhance the crystalline order of the epitaxial 0001 oriented films. X-ray photoelectron spectroscopy shows that the composition of the films is near-stoichiometric for all deposition temperatures and for high sputtering power values of 300 W and 400 W, whereas under-stoichiometric films arc obtained when applying 100 W or 200 W. Decreasing the deposition temperature, or in particular the sputtering power, result in higher C and O impurity levels. The resistivity of the films was evaluated by four-point-probe measurements and found to scale with the amount of O impurities in the films. The lowest resistivity value obtained is 130 mu Omega cm, which makes the ZrB2 films interesting as an electrical contact material. (C) 2015 Elsevier B.V. All rights reserved.
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| 3. |
- Tengdelius, Lina, et al.
(författare)
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ZrB2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB2 target
- 2016
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Ingår i: Journal of Crystal Growth. - : Elsevier. - 0022-0248 .- 1873-5002. ; 453, s. 71-76
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Tidskriftsartikel (refereegranskat)abstract
- ZrB2 films were deposited on 900 °C-preheated or non-preheated GaN(0001) surfaces by direct current magnetron sputtering from a compound target. Analytical transmission electron microscopy and scanning transmission electron microscopy with energy dispersive X-ray spectroscopy and electron energy loss spectroscopy revealed a 0001 fiber textured ZrB2 film growth following the formation of a ~2 nm thick amorphous BN layer onto the GaN(0001) at a substrate temperature of 900 °C. The amorphous BN layer remains when the substrate temperature is lowered to 500 °C or when the preheating step is removed from the process and results in the growth of polycrystalline ZrB2 films. The ZrB2 growth phenomena on GaN(0001) is compared to on 4H-SiC(0001), Si(111), and Al2O3(0001) substrates, which yield epitaxial film growth. The decomposition of the GaN surface during vacuum processing during BN interfacial layer formation is found to impede epitaxial growth of ZrB2.
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