| 1. |
- Apaydin, Dogukan, 1991, et al.
(författare)
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Optically Pumped UVC Photonic Crystal Surface-Emitting Laser
- 2023
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Photonic crystal surface-emitting lasers (PCSELs) are a new type of semiconductor lasers that offer a high optical output power while maintaining single-mode operation and a low divergence angle. Such devices rely upon the in-plane optical feedback from a two-dimensional photonic crystal and feature out-of-plane emission of the modes with zero group velocity at the photonic band edges by diffraction. Since the demonstration of the first PCSEL [1], the concept has been implemented in standard semiconductor materials with the demonstration of highperforming infrared and blue-emitting lasers [2, 3]. Extending the laser operation to shorter emission wavelengths would be a major breakthrough as such lasers would be of high interest for disinfection, material processing, curing, and medical treatments.
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| 2. |
- Apaydin, Dogukan, 1991, et al.
(författare)
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UVC photonic crystal surface-emitting lasers with low-divergent far-fields
- 2023
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Photonic crystal surface-emitting lasers (PCSEL) emitting in the ultraviolet (UV) C spectral range are exciting devices due to their low divergence and single-mode emission capable of high output powers as already demonstrated in the infrared [1] and blue spectral range [2]. This is due to their unique design, which incorporates a photonic crystal leading to a large optical gain area. PCSELs are based upon in-plane feedback from the photonic crystal and out-of-plane emission by the diffraction of the modes with zero group velocity at the photonic band edges. We recently demonstrated, to the best of our knowledge, the first UVC PCSEL with an emission at 279 nm. The device structure consists of 3 x 2 nm AlGaN quantum wells (QW) in a 60 nm Al0.70Ga0.30N waveguide and AlN cladding layers. The 140x140 μm large photonic crystal is dry etched into the top AlN cladding layer with a hexagonal lattice consisting of circular holes with a lattice constant of 140 nm and an etch depth of 65 nm, leaving 65 nm between the bottom of the photonic crystals and the first quantum well. Lasing in these PCSELs was achieved by resonant pumping of the QWs by a 266 nm pulsed laser with a spot size of 82 μm at room temperature. The devices exhibit threshold pump power densities from 25 down to 13 MW/cm2 showing a spectral narrowing down to 25 pm. Far-field patterns and band structures were investigated for a range of filling factors (fraction of the surface that is etched) between 10% to 26%, and the far-fields contain emission bands that were not yet reported in PCSELs at longer wavelengths. Changing the filling factor affects the photonic crystal band structure and thereby the optical mode at the Γ-point that will reach threshold first. This feature enables us to intentionally select the lasing mode with the desired far-field pattern. By a proper choice of filling factor, the intensity in the angular emission bands is diminished, resulting in a far-field with a narrow beam divergence of <1°.
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| 3. |
- Bergmann, Michael Alexander, 1989, et al.
(författare)
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Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing
- 2023
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Ingår i: ACS Photonics. - : American Chemical Society (ACS). - 2330-4022. ; 10:2, s. 368-373
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Tidskriftsartikel (refereegranskat)abstract
- Ultraviolet light-emitting diodes (LEDs) suffer from a low wall-plug efficiency, which is to a large extent limited by the poor light extraction efficiency (LEE). A thin-film flip-chip (TFFC) design with a roughened N-polar AlGaN surface can substantially improve this. We here demonstrate an enabling technology to realize TFFC LEDs emitting in the UVB range (280-320 nm), which includes standard LED processing in combination with electrochemical etching to remove the substrate. The integration of the electrochemical etching is achieved by epitaxial sacrificial and etch block layers in combination with encapsulation of the LED. The LEE was enhanced by around 25% when the N-polar AlGaN side of the TFFC LEDs was chemically roughened, reaching an external quantum efficiency of 2.25%. By further optimizing the surface structure, our ray-tracing simulations predict a higher LEE from the TFFC LEDs than flip-chip LEDs and a resulting higher wall-plug efficiency.
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| 4. |
- Bergmann, Michael Alexander, 1989, et al.
(författare)
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Thin-film flip-chip UVB LEDs realized by electrochemical etching
- 2020
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:12, s. 121101-
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0.37Ga0.63N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacrificial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction efficiency that limits the power conversion efficiency in AlGaN-based LEDs.
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| 5. |
- Bergmann, Michael Alexander, 1989, et al.
(författare)
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Thin-film flip-chip UVB LEDs realized by electrochemical etching
- 2022
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We will give an overview of different concepts to increase the light extraction efficiency (LEE) of ultraviolet (UV) light-emitting diodes (LEDs) with a focus on thin-film flip-chip (TFFC) devices. Optical simulations show that a TFFC design can greatly improve the LEE with a transparent p-side, reflective contacts, and optimized surface roughening. We will demonstrate UVB-emitting TFFC LEDs based on our fabrication platform for AlGaN thin films with high aluminum content. The fabrication is compatible with a standard LED process and uses substrate removal based on selective electrochemical etching as the key enabling technology.
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| 6. |
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| 7. |
- Cardinali, G., et al.
(författare)
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Low-Threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 121:10
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Tidskriftsartikel (refereegranskat)abstract
- The performance of vertical-cavity surface-emitting lasers (VCSELs) is strongly dependent on the spectral detuning between the gain peak and the resonance wavelength. Here, we use angle-resolved photoluminescence spectroscopy to investigate the emission properties of AlGaN-based VCSELs emitting in the ultraviolet-B spectral range with different detuning between the photoluminescence peak of the quantum-wells and the resonance wavelength. Accurate setting of the cavity length, and thereby the resonance wavelength, is accomplished by using doping-selective electrochemical etching of AlGaN sacrificial layers for substrate removal combined with deposition of dielectric spacer layers. By matching the resonance wavelength to the quantum-wells photoluminescence peak, a threshold power density of 0.4 MW/cm2 was achieved, and this was possible only for smooth etched surfaces with a root mean square roughness below 2 nm. These results demonstrate the importance of accurate cavity length control and surface smoothness to achieve low-Threshold AlGaN-based ultraviolet VCSELs.
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| 8. |
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| 9. |
- Chang, Tsu Chi, et al.
(författare)
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Electrically Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers with TiO2 High-Index-Contrast Grating Reflectors
- 2020
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Ingår i: ACS Photonics. - : American Chemical Society (ACS). - 2330-4022. ; 7:4, s. 861-866
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the first electrically injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a TiO2 high-index-contrast grating (HCG) as the top mirror. Replacing the top distributed Bragg reflector (DBR) with an HCG offers substantial thickness reduction, polarization-pinning, and setting of the resonance wavelength by the grating parameters. Conventional HCGs are usually suspended in the low refractive index material, such as air, in order to create the largest refractive index contrast. However, the mechanical stability of such structures can be questioned and creating free-hanging GaN-membrane on top of GaN is problematic. We have therefore fabricated TiO2-HCGs resting directly on GaN without an air-gap. No DBR layers are used below the HCG to boost the reflectivity. A VCSEL with an aperture diameter of 10 μm shows a threshold current of 25 mA under pulsed operation at room temperature. The lasing modes locate around 400 nm and are transversely electrically -polarized with a line width of 0.5 nm. The full-width half-maximum beam divergence is 10°. This demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as postgrowth setting of the resonance wavelength.
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| 10. |
- Chang, Tsu-Chi, et al.
(författare)
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GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating
- 2020
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 11280
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Konferensbidrag (refereegranskat)abstract
- We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 mu m had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.
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