| 1. |
- Hong, J., et al.
(författare)
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Plasma chemistries for high density plasma etching of SiC
- 1999
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Ingår i: Journal of Electronic Materials. - Charlottesville, VA, USA. - 0361-5235 .- 1543-186X. ; 28:3, s. 196-201
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Tidskriftsartikel (refereegranskat)abstract
- A variety of different plasma chemistries, including SF6, Cl2, ICI, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resonance). Rates up to 4500 angstroms·min-1 were obtained for SF6 plasmas, while much lower rates (≀800 angstroms·min-1) were achieved with Cl2, ICI, and IBr. The F2-based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4-0.5), but Ni masks are more robust, and allow etch depths ≥10 Όm in the SiC. A micromachining process (sequential etch/deposition steps) designed for Si produces relatively low etch rates (<2,000 angstroms·min-1) for SiC.
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| 2. |
- Leerungnawarat, P., et al.
(författare)
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Via-hole etching for SiC
- 1999
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 17, s. 2050-2054
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Tidskriftsartikel (refereegranskat)abstract
- Four different F2-based plasma chemistries for high-rate etching of SiC under inductively coupled plasma (ICP) conditions were examined. Much higher rates (up to 8000 #x2009; #xc5; #x2009;min-1) were achieved with NF3 and SF6 compared with BF3 and PF5, in good correlation with their bond energies and their dissociation efficiency in the ICP source. Three different materials (Al, Ni, and indium #x2013;tin oxide) were compared as possible masks during deep SiC etching for through-wafer via holes. Al appears to produce the best etch resistance, particularly when O2 is added to the plasma chemistry. With the correct choice of plasma chemistry and mask material, ICP etching appears to be capable of producing via holes in SiC substrates. #xa9; 1999 American Vacuum Society.
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