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A Monolithic, 500 d...
A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology
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- Hedayati, Raheleh (author)
- KTH,Integrerade komponenter och kretsar
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- Lanni, Luigia (author)
- KTH,Integrerade komponenter och kretsar
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- Rodriguez, Saul (author)
- KTH,Integrerade komponenter och kretsar
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- Malm, Bengt Gunnar (author)
- KTH,Integrerade komponenter och kretsar
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- Rusu, Ana (author)
- KTH,Integrerade komponenter och kretsar
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- IEEE, 2014
- 2014
- English.
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In: IEEE Electron Device Letters. - : IEEE. - 0741-3106 .- 1558-0563. ; 35:7, s. 693-695
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https://kth.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25 degrees C to 500 degrees C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3 dB bandwidth increases from 270 kHz at 25 degrees C to 410 kHz at 500 degrees C. The opamp achieves 1.46 V/mu s slew rate and 0.25% total harmonic distortion. This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Bipolar integrated circuits (ICs)
- high temperature ICs
- negative feedback
- operational amplifiers
Publication and Content Type
- ref (subject category)
- art (subject category)
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