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- Storasta, Liutauras, et al.
(författare)
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Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
- 2003
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Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 423-426
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Konferensbidrag (refereegranskat)abstract
- Boron related photoluminescence (PL) and capacitance transient spectroscopy (DLTS and MCTS) peaks have been investigated around SIMS craters. Enhancement of boron and hydrogen related PL was observed in the vicinity of the crater, whereas the concentration of electrically active boron as measured by MCTS has decreased considerably. Comparison of the boron MCTS peak behavior after electron and proton irradiation is presented. Possible defect models based on the obtained results are discussed.
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- Sundqvist, B, et al.
(författare)
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Growth of high quality p-type 4H-SiC substrates by HTCVD
- 2003
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Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 21-24
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Konferensbidrag (refereegranskat)abstract
- By using the HTCVD technique together with Al doping, highly p-type doped 2" diameter 4H-SiC off-axis substrates with micropipe densities below 10 cm(-2) were grown. The Al concentration in the substrates could be varied from low 10(15) cm(-3) to low 10(19) cm(-3). Bulk resistivities down to 0.5 Omega-cm were realized. There were no indications of micropipe formation from Al precipitates, on the contrary, micropipe closing was observed.
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