| 1. |
- Hikosaka, Y., et al.
(författare)
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X-ray absorption measured in the resonant Auger scattering mode
- 2008
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 101:7
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Tidskriftsartikel (refereegranskat)abstract
- We report both experimental and theoretical studies on x-ray absorption measured in the resonant Auger scattering mode of gas phase carbon monoxide near the O1s -> 2 pi region. Both experiment and theory display a crucial difference between the x-ray absorption profiles obtained in the conventional and resonant scattering modes. Lifetime vibrational interference is the main source of the difference. It is demonstrated that such interference, which arises from a coherent excitation to overlapping intermediate levels, ruins the idea for obtaining x-ray absorption spectra in a lifetime broadening free regime.
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| 2. |
- Hikosaka, Y., et al.
(författare)
-
Energy Correlation of the Three Electrons Emitted during the Triple Photoionization of Ar
- 2009
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 102:1, s. 013002-
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Tidskriftsartikel (refereegranskat)abstract
- We report on an experimental investigation of energy correlation among three electrons emitted in valence triple photoionization (TPI) of Ar. The energy correlations reveal a predominant contribution from sequential TPI processes involving intermediate Ar2+ formation, which suggests that such indirect contributions should be included in the formulation of the threshold law for TPI cross sections. The differential cross section for direct TPI at about 150 eV above threshold producing one slow electron with a few eV kinetic energy is found to have a deeply hollow U-shaped profile in energy sharing between the other two electrons.
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| 3. |
- Honda, Y., et al.
(författare)
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DAP emission band in a carbon doped (1-101)GaN grown ob (001) Si substrate
- 2009
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Ingår i: Phys. Stat. Sol. (c) Vol. 6. - : Wiley. ; , s. S772-S775
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Konferensbidrag (refereegranskat)abstract
- Optical spectra of a C-doped (1-101) GaN are investigated via time resolved photoluminescence spectroscopy. Samples with different C-doping levels were prepared by metalorganic vapour phase epitaxy using C2H2 as the doping precursor. A carbon related emission peak is identified at 375 nm which shows typical behaviours for a donor-acceptor-pair emission band. The acceptor level is estimated to be 190 meV which is at 43 meV shallower than that in an Mg doped GaN. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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