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- Budh Norrbrink, Cecilia, et al.
(författare)
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Pain in a Swedish spinal cord injury population
- 2003
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Ingår i: Clinical Rehabilitation. - : SAGE Publications. - 0269-2155 .- 1477-0873. ; 17:6, s. 685-690
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Tidskriftsartikel (refereegranskat)abstract
- Objective: To describe pain and associated variables in a prevalence group of persons with a sustained spinal cord injury (SCI) in the Swedish capital and its surroundings. Setting: Spinalis SCI Unit (outpatient clinic), Stockholm, Sweden. Design: Assessment over a 12-month period in a yearly health control. Subjects: Four hundred and fifty-six SCI patients. Results: Two hundred and ninety-one out of 456 SCI patients (63.7%) suffered from pain, and in 45.7% of these it was classified as being neurogenic. Aching pain was the most used descriptor (38.5%). The onset of pain was commonly within three months (73.5%). In 70.4% of patients pain occurred below the level of the lesion. Most patients identified pain as coming from one (55.0%) or two (28.2%) body regions. Rating of the general pain intensity on a visual analogue scale (VAS) was 46 out of 100 and rating of the worst pain intensity was 78 out of 100. Ninety-four out of 276 patients (32.3%) considered that their quality of life was significantly affected by pain. Conclusion: Pain was most common in patients with incomplete lesions (ASIA impairment grade D) and there was a correlation between pain and higher mean age at injury and between pain and female gender.
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| 4. |
- Larsson, Mats, 1976-, et al.
(författare)
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Luminescence study of Si/Ge quantum dots
- 2003
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Ingår i: Physica. E, Low-Dimensional systems and nanostructures. - 1386-9477 .- 1873-1759. ; 16:3-4, s. 476-480
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Tidskriftsartikel (refereegranskat)abstract
- We present a photoluminescence (PL) study of Ge quantum dots embedded in Si. Two different types of recombination processes related to the Ge quantum dots are observed in temperature-dependent PL measurements. The Ge dot-related luminescence peak near 0.80 eV is ascribed to the spatially indirect recombination in the type-II band lineup, while a high-energy peak near 0.85 eV has its origin in the spatially direct recombination. A transition from the spatially indirect to the spatially direct recombination is observed as the temperature is increased. The PL dependence of the excitation power shows an upshift of the Ge quantum dot emission energy with increasing excitation power density. The blueshift is ascribed to band bending at the type-II Si/Ge interface at high carrier densities. Comparison is made with results derived from measurements on uncapped samples. For these uncapped samples, no energy shifts due to excitation power or temperatures are observed in contrast to the capped samples.
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| 5. |
- Larsson, Mats, 1976-, et al.
(författare)
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Photoluminescence study of Si/Ge quantum dots
- 2003
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 532-535, s. 832-836
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Tidskriftsartikel (refereegranskat)abstract
- Ge quantum dots embedded in Si are studied by means of photoluminescence (PL). The temperature dependent PL measurements show two different types of recombination processes related to the quantum dots. We ascribe a peak near 0.80 eV to the spatially indirect recombination in the type-II band lineup where the electron is located in the surrounding Si close to the interface and the hole in the Ge dot. Furthermore, a peak near 0.85 eV is attributed to the spatially direct recombination. We observe a transition from the spatially indirect to the spatially direct recombination as the temperature is increased. The measurements also show an up-shift of the Ge quantum dot emission energy with increasing excitation power density. The blueshift is primarily ascribed to an enhanced confinement of the electron associated with the increased band bending at the type-II Si/Ge interface at high carrier densities. Comparison is made with results, derived from measurements on uncapped samples. For these uncapped samples, no energy shifts due to excitation power or temperatures are observed in contrast to the capped samples. ⌐ 2003 Elsevier Science B.V. All rights reserved.
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| 6. |
- Larsson, Mats, et al.
(författare)
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Spatially direct and indirect transitions observed for Si/Ge quantum dots
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:26, s. 4785-4787
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Tidskriftsartikel (refereegranskat)abstract
- The optical properties of Ge quantum dots embedded in Si were investigated by means of photoluminescence, with temperature and excitation power density as variable parameters. Two different types of recombination processes related to the Ge quantum dots were observed. A transfer from the spatially indirect to the spatially direct recombination in the type-II band lineup was observed with increasing temperature. A blueshift of the spatially indirect Ge quantum-dot-emission energy with increasing excitation power is ascribed to band bending at the type-II Si/Ge interface for high carrier densities. Comparative studies were performed on uncapped Ge dot structures.
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