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- Wang, J. J., et al.
(författare)
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Low damage, highly anisotropic dry etching of SiC
- 1998
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Ingår i: High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International. ; , s. 10-14
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Konferensbidrag (refereegranskat)abstract
- A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.5N0.5 in Inductively Coupled Plasma NF3/O2 and NF 3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions
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2. |
- Hong, J., et al.
(författare)
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Plasma chemistries for high density plasma etching of SiC
- 1999
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Ingår i: Journal of Electronic Materials. - Charlottesville, VA, USA. - 0361-5235 .- 1543-186X. ; 28:3, s. 196-201
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Tidskriftsartikel (refereegranskat)abstract
- A variety of different plasma chemistries, including SF6, Cl2, ICI, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resonance). Rates up to 4500 angstroms·min-1 were obtained for SF6 plasmas, while much lower rates (≀800 angstroms·min-1) were achieved with Cl2, ICI, and IBr. The F2-based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4-0.5), but Ni masks are more robust, and allow etch depths ≥10 Όm in the SiC. A micromachining process (sequential etch/deposition steps) designed for Si produces relatively low etch rates (<2,000 angstroms·min-1) for SiC.
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