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- Chen, Xi, et al.
(författare)
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Device noise reduction for Silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
- 2019
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Ingår i: ACS Sensors. - : American Chemical Society (ACS). - 2379-3694. ; 4:2, s. 427-433
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Tidskriftsartikel (refereegranskat)abstract
- The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced noise, 2.1×10-9 V2µm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET sensor device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
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