| 1. |
|
|
| 2. |
- Cederbrant, Karin, et al.
(författare)
-
Cytokine production, lymphocyte proliferation and T-cell receptor Vbeta expression in primary peripheral blood mononuclear cell cultures from nickel-allergic individuals
- 2003
-
Ingår i: International Archives of Allergy and Immunology. - : S. Karger AG. - 1018-2438 .- 1423-0097. ; 132:4, s. 373-379
-
Tidskriftsartikel (refereegranskat)abstract
- Background: Clinical history and patch test constitute the two cornerstones in the diagnosis of nickel (Ni) allergy. Due to technical and interpretative limits of the patch test, the in vitro lymphocyte transformation test (LTT) has been developed for confirming contact allergy, however, most studies show an overlap in lymphocyte proliferation between Ni-allergic and nonallergic subjects using the LTT. The aim of this study was to see if the secretion of cytokines, especially interleukin (IL)-10 and IL-17, or the use of T-cell receptor (TCR) V▀ families in Ni-stimulated primary peripheral blood mononuclear cell (PBMC) cultures might be more useful for discriminating between allergic and nonallergic subjects. Methods: Ni2+-stimulated primary PBMC cultures derived from female subjects diagnosed as Ni-allergic (n = 5) or nonallergic (n = 5) on the basis of a positive or negative patch test were assessed for cell proliferation by tritiated thymidine incorporation and for production of interferon-?, IL-4, IL-10 and IL-17 in the culture supernatant by ELISA. The immunophenotype and TCR-V▀ family affiliation of the Ni2+-induced lymphoblasts were determined by flow cytometry. Results: Lymphocytes from Ni-allergic individuals challenged with a high and a low concentration of Ni showed significantly higher cell proliferation than lymphocytes from nonallergic individuals, but all subjects showed a positive LTT result (stimulation index>2). We found a significantly higher release of IL-10 in Ni2+-treated cultures from Ni-allergic compared with nonallergic subjects that provided better separation between individuals in the two groups than did lymphocyte proliferation. The proliferating lymphoblasts were predominantly CD4+, and in 2 of the 5 Ni-allergic subjects, but in none of the 5 nonallergic subjects, the CD4+ lymphoblasts showed a dominance of TCR-V▀17. Conclusions: Determination of IL-10 production in primary PBMC cultures is a potentially promising in vitro method for discrimination of Ni allergy in females, as compared with cell proliferation. Copyright ⌐ 2003 S. Karger AG, Basel.
|
|
| 3. |
- Engstrom, C, et al.
(författare)
-
High-temperature stability of epitaxial, non-isostructural Mo/NbN superlattices
- 2000
-
Ingår i: Journal of Materials Research. - 0884-2914 .- 2044-5326. ; 15:2, s. 554-559
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of 1000 degrees C vacuum annealing on the structure and hardness of epitaxial Mo/NbN superlattice thin films was studied. The intensity of superlattice satellite peaks, measured by x-ray diffraction, decreased during annealing while new peaks corresponding to a MoNbN ternary phase appeared. The results are consistent with the Mo-Nb-N phase diagram, which shows no mutual solubility between Mo, NbN, and MoNbN. Even after 3-h anneals and a loss of most of the superlattice peak intensity, the room-temperature hardness was the same as for as-deposited superlattices, The retained hardness suggests that a residual nanocomposite structure is retained even after the formation of the ternary structure.
|
|
| 4. |
|
|
| 5. |
- Hultman, C M, et al.
(författare)
-
Perinatal risk factors for infantile autism
- 2002
-
Ingår i: Epidemiology. - : Ovid Technologies (Wolters Kluwer Health). - 1044-3983 .- 1531-5487. ; 13:4, s. 417-423
-
Tidskriftsartikel (refereegranskat)abstract
- Background. Etiologic hypotheses in infantile autism suggest a strong genetic component, as well as possible environmental risks linked to early fetal development. We evaluated the association of maternal, pregnancy, delivery, and infant characteristics and risk of infantile autism. Methods. We conducted a case-control study nested within a population-based cohort (all Swedish children born in 1974-1993). We used prospectively recorded data from the Swedish Birth Register, which were individually linked to the Swedish Inpatient Register. Cases were 408 children (321 boys and 87 girls) discharged with a main diagnosis ion infantile autism from any hospital in Sweden before 10 years of age in the period 1987-1994, plus 2,040 matched controls. Conditional logistic regression was used to calculate odds ratios (ORs) and 95% confidence intervals (CIs). Results. The risk of autism was associated with daily smoking in early pregnancy (OR = 1.4; CI = 1.1-1.8), maternal birth outside Europe and North America (OR - 3.0; CI = 1.7-5.2), cesarean delivery (OR = 1.6; CI = 1.1-2.3), being small for gestational age (SGA; OR = 2.1; CI = 1.1-3.0), a 5-minute Apgar score below 7 (OR = 3.2, CI = 1.2-8.2), and congenital malformations (OR = 1.8, CI = 1.1-3.1). No association was found between autism and head circumference, maternal diabetes, being a twin, or season of birth. Conclusions. Our findings suggest that intrauterine and neonatal factors related to deviant intrauterine growth or fetal distress are important in the pathogenesis of autism.
|
|
| 6. |
- Svensson, BG, et al.
(författare)
-
Doping of silicon carbide by ion implantation
- 2001
-
Ingår i: Materials Science Forum, Vols. 353-356. - : Trans Tech Publications Inc.. - 9780878498734 - 0878498737 ; , s. 549-554, s. 549-554
-
Konferensbidrag (refereegranskat)abstract
- A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10(9) and 10(15) cm(-2) and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (less than or equal to 10(10) cm(-2)) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 degreesC. However, at higher doses (10(14)-10(15) Al/cm(2)) the rate of defect recombination (annihilation) increases substantially during hot implants (greater than or equal to 200 degreesC) and in these samples one type of structural defect dominates after past-implant annealing at 1700-2000 degreesC. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.
|
|
| 7. |
|
|
