| 1. |
|
|
| 2. |
- Abolins, M., et al.
(författare)
-
The ATLAS Data Acquisition and High Level Trigger system
- 2016
-
Ingår i: Journal of Instrumentation. - 1748-0221. ; 11
-
Tidskriftsartikel (refereegranskat)abstract
- This paper describes the data acquisition and high level trigger system of the ATLAS experiment at the Large Hadron Collider at CERN, as deployed during Run 1. Data flow as well as control, configuration and monitoring aspects are addressed. An overview of the functionality of the system and of its performance is presented and design choices are discussed.
|
|
| 3. |
- Noguchi, S, et al.
(författare)
-
FANTOM5 CAGE profiles of human and mouse samples
- 2017
-
Ingår i: Scientific data. - : Springer Science and Business Media LLC. - 2052-4463. ; 4, s. 170112-
-
Tidskriftsartikel (refereegranskat)abstract
- In the FANTOM5 project, transcription initiation events across the human and mouse genomes were mapped at a single base-pair resolution and their frequencies were monitored by CAGE (Cap Analysis of Gene Expression) coupled with single-molecule sequencing. Approximately three thousands of samples, consisting of a variety of primary cells, tissues, cell lines, and time series samples during cell activation and development, were subjected to a uniform pipeline of CAGE data production. The analysis pipeline started by measuring RNA extracts to assess their quality, and continued to CAGE library production by using a robotic or a manual workflow, single molecule sequencing, and computational processing to generate frequencies of transcription initiation. Resulting data represents the consequence of transcriptional regulation in each analyzed state of mammalian cells. Non-overlapping peaks over the CAGE profiles, approximately 200,000 and 150,000 peaks for the human and mouse genomes, were identified and annotated to provide precise location of known promoters as well as novel ones, and to quantify their activities.
|
|
| 4. |
- Asano, H., et al.
(författare)
-
Spectroscopic study of the Λ(1405) resonance via the d (K-, n) reaction at J-PARC
- 2019
-
Ingår i: 13th International Conference on Hypernuclear and Strange Particle Physics, HYP 2018. - : AIP Publishing. - 9780735418721 ; 2130
-
Konferensbidrag (refereegranskat)abstract
- The structure of the Λ(1405) hyperon is an important and long-standing issue related to the K̄-nucleus interaction. The J-PARC E31 experiment has been performed to investigate the Λ(1405) spectrum shape. Because it is hard to form the Λ(1405) directly by a K̄N scattering in free space, E31 uses the d(K-, n) reaction with an incident kaon momentum of 1 GeV/c. We will identify three final states - ς-π+, ς+π-, ς0π0-so that the isospin structure of hyperon resonance states produced can be decomposed. The first physics run of the E31 experiment was performed in 2016. To enhance the statistics of the data set, we have performed the second physics run in the beginning of 2018. During the second run of E31, around 3.9×1010 kaons impacted on the deuteron target.
|
|
| 5. |
|
|
| 6. |
- Yamaga, Takumi, et al.
(författare)
-
Study of the elementary (K -, n) reactions to search for the K NN bound state via the 3He (K -, n) reaction at J-PARC
- 2016
-
Ingår i: XVIth International Conference on Hadron Spectroscopy, Hadron 2015. - : Author(s). - 9780735413894 ; 1735
-
Konferensbidrag (refereegranskat)abstract
- We have searched for the simplest kaonic nuclear state, K̄NN, using the in-flight 3He (K-, n) reaction at the J-PARC hadron experimental facility. In the semi-inclusive neutron missing-mass spectrum at θnlab=0°, an excess of yield was observed just below the K- pp mass-threshold, which cannot be explained by any elementary reactions [PTEP 2015, 061D01]. To understand the missing-mass spectrum of 3He (K-, n) X, we investigated the elementary (K-, n) reactions using hydrogen and deuterium targets. The p (K-, n) X missing-mass spectrum was well described by the charge-exchange reaction. However, in the d (K-, n) X spectrum, we observed an excess of yield just below the K- p mass-threshold, which was similar to that in the 3He (K-, n) X spectrum.
|
|
| 7. |
- Sada, Y., et al.
(författare)
-
Structure near the K- + p + p threshold in the in-flight 3He(K-, Λp)n reaction
- 2016
-
Ingår i: Progress of Theoretical and Experimental Physics. - : Oxford University Press (OUP). - 2050-3911. ; 2016:5
-
Tidskriftsartikel (refereegranskat)abstract
- To search for an S = -1 di-baryonic state which decays toΛp, the 3He(K-,Λp)nmissing reaction was studied at 1.0 GeV/c. Unobserved neutrons were kinematically identified from the missing mass MX of the 3He (K-,Λp) X reaction in order to have a large acceptance for the Λpn final state. The observed Λpn events, distributed widely over the kinematically allowed region of the Dalitz plot, establish that the major component comes from a three-nucleon absorption process. A concentration of events at a specific neutron kinetic energy was observed in a region of low momentum transfer to the Λp. To account for the observed peak structure, the simplest S-wave polewas assumed to exist in the reaction channel, having a Breit-Wigner formin energy and with a Gaussian form factor. A minimum X2 method was applied to deduce its mass, MX = 2355+6 -8 (stat.) ±12 (syst.)MeV/c2, and decay width, γX = 110+19 -17 (stat.) ±27 (syst.)MeV/c2, respectively. The form factor parameter QX ∼ 400MeV/c implies that the range of the interaction is about 0.5 fm.
|
|
| 8. |
- Adam, A, et al.
(författare)
-
Abstracts from Hydrocephalus 2016.
- 2017
-
Ingår i: Fluids and Barriers of the CNS. - : Springer Science and Business Media LLC. - 2045-8118. ; 14:Suppl 1
-
Tidskriftsartikel (refereegranskat)
|
|
| 9. |
- Kuroki, S. -I, et al.
(författare)
-
4H-SiC pseudo-CMOS logic inverters for harsh environment electronics
- 2017
-
Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications. - 9783035710434 ; , s. 669-672
-
Konferensbidrag (refereegranskat)abstract
- For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high voltage swing of 4.4 V was achieved at VDD=5 V. Simple nMOS inverters were also investigated. Both of pseudo-CMOS and nMOS inverters were operated at a high temperature of 200ºC. For future SiC large integrated circuits, junction leakage current between n+ regions were also investigated with the comb-shaped test elements.
|
|
| 10. |
- Ishii, T., et al.
(författare)
-
Suppression of short-channel effects in 4H-SIC trench MOSFETS
- 2019
-
Ingår i: Silicon Carbide and Related Materials 2018. - : Trans Tech Publications Ltd. - 9783035713329 ; , s. 613-616
-
Konferensbidrag (refereegranskat)abstract
- Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.
|
|
