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Träfflista för sökning "WFRF:(Ivády Viktor) srt2:(2015-2019)"

Sökning: WFRF:(Ivády Viktor) > (2015-2019)

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1.
  • Christle, David J., et al. (författare)
  • Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
  • 2017
  • Ingår i: Physical Review X. - : AMER PHYSICAL SOC. - 2160-3308. ; 7:2
  • Tidskriftsartikel (refereegranskat)abstract
    • The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects.
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2.
  • Davidsson, Joel, et al. (författare)
  • First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H-SiC
  • 2018
  • Ingår i: New Journal of Physics. - : IOP PUBLISHING LTD. - 1367-2630. ; 20
  • Tidskriftsartikel (refereegranskat)abstract
    • Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit (qubit) and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. In multicomponent semiconductors point defects often exhibit several non-equivalent configurations of similar but different characteristics. The most relevant example of such point defect is the divacancy in silicon carbide, where some of the non-equivalent configurations implement room temperature qubits. Here, we identify four different configurations of the divacancy in 4H-SiC via the comparison of experimental measurements and results of first-principle calculations. In order to accomplish this challenging task, we carry out an exhaustive numerical accuracy investigation of zero-phonon line and hyperfine coupling parameter calculations. Based on these results, we discuss the possibility of systematic quantum bit search.
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3.
  • Davidsson, Joel, et al. (författare)
  • Identification of divacancy and silicon vacancy qubits in 6H-SiC
  • 2019
  • Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 114:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Point defects in semiconductors are relevant for use in quantum technologies as room temperature qubits and single photon emitters. Among suggested defects for these applications are the negatively charged silicon vacancy and the neutral divacancy in SiC. The possible nonequivalent configurations of these defects have been identified in 4H-SiC, but for 6H-SiC, the work is still in progress. In this paper, we identify the different configurations of the silicon vacancy and the divacancy defects to each of the V1-V3 and the QL1-QL6 color centers in 6H-SiC, respectively. We accomplish this by comparing the results from ab initio calculations with experimental measurements for the zero-phonon line, hyperfine tensor, and zero-field splitting. Published under license by AIP Publishing.
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4.
  • Falk, Abram L., et al. (författare)
  • Optical Polarization of Nuclear Spins in Silicon Carbide
  • 2015
  • Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 114:24, s. 247603-
  • Tidskriftsartikel (refereegranskat)abstract
    • We demonstrate optically pumped dynamic nuclear polarization of Si-29 nuclear spins that are strongly coupled to paramagnetic color centers in 4H- and 6H-SiC. The 99% +/- 1% degree of polarization that we observe at room temperature corresponds to an effective nuclear temperature of 5 mu K. By combining ab initio theory with the experimental identification of the color centers optically excited states, we quantitatively model how the polarization derives from hyperfine-mediated level anticrossings. These results lay a foundation for SiC-based quantum memories, nuclear gyroscopes, and hyperpolarized probes for magnetic resonance imaging.
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5.
  • Fashandi, Hossein, et al. (författare)
  • Dirac points with giant spin-orbit splitting in the electronic structure of two-dimensional transition-metal carbides
  • 2015
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 92:15
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigated the structural and electrical properties of 2D MXene sheets by means of firstprinciples density functional theory (DFT) calculations. To describe the Kohn-Sham states, plane wave basis set and projector augmented wave method (PAW) were used as implemented in the Vienna ab initio Simulation Package (VASP). We applied PBE parameterization of the generalized gradient approximation of the exchange and correlation energy functional to account for many-body effects of the interacting electron system. Convergent sampling of the Brillouin-zone was achieved by a Γ-centered 15×15×1 grid. In order to model a single sheet of MXene we ensured at least 30 Å vacuum between the periodically repeated sheets. For the structural optimization 1×10−3 eV/Å force criteria was used. The relativistic spin-orbit coupling effects were also included in our simulations regarding band structure and density of states.
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6.
  • Green, B. L., et al. (författare)
  • All-optical hyperpolarization of electron and nuclear spins in diamond
  • 2017
  • Ingår i: Physical Review B. - College Park : American Physical Society. - 2469-9950 .- 2469-9969. ; 96:5
  • Tidskriftsartikel (refereegranskat)abstract
    • Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin polarization of C-13 and N-15 in N-15-doped diamond. (15)Npolarization enhancements up to- 2000 above thermal equilibrium are observed in the paramagnetic system Ns(0). Nuclear spin polarization is shown to diffuse to bulk C-13 with NMR enhancements of -200 at room temperature and -500 at 240 K, enabling a route to microwave-free high-sensitivity NMR study of biological samples in ambient conditions.
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7.
  • Gällström, Andreas, et al. (författare)
  • Optical properties and Zeeman spectroscopy of niobium in silicon carbide
  • 2015
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 92:7, s. 1-14
  • Tidskriftsartikel (refereegranskat)abstract
    • The optical signature of niobium in the low-temperature photoluminescence spectra of three common polytypes of SiC (4H, 6H, and 15R) is observed and confirms the previously suggested concept that Nb occupies preferably the Si-C divacancy with both Si and C at hexagonal sites. Using this concept we propose a model considering a Nb-bound exciton, the recombination of which is responsible for the observed luminescence. The exciton energy is estimated using first-principles calculation and the result is in very good agreement with the experimentally observed photon energy in 4H SiC at low temperature. The appearance of six Nb-related lines in the spectra of the hexagonal 4H and 6H polytypes at higher temperatures is tentatively explained on the grounds of the proposed model and the concept that the Nb center can exist in both C1h and C3v symmetries. The Zeeman splitting of the photoluminescence lines is also recorded in two different experimental geometries and the results are compared with theory based on phenomenological Hamiltonians. Our results show that Nb occupying the divacancy at the hexagonal site in the studied SiC polytypes behaves like a deep acceptor.
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8.
  • Ivády, Viktor (författare)
  • Development of theoretical approaches for post-silicon information processing
  • 2016
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Despite knowing the fundamental equations in most of the physics research areas, still there is an unceasing need for theoretical method development, thanks to the more and more challenging problems addressed by the research community. The investigation of post-silicon, non-classical information processing is one of the new and rapidly developing areas that requires tremendous amount of theoretical support, new understanding, and accurate theoretical predictions. My thesis focuses on theoretical method development for solid-state quantum information processing, mainly in the field of point defect quantum bits (qubits) in silicon carbide (SiC) and diamond. Due to recent experimental breakthroughs in this field, there are diverse theoretical problems, ranging from functional development for accurate first principles description of point defects, through complete theoretical characterization of qubits, to the modeling and simulation of actual quantum information protocols, that are needed to be addressed. The included articles of this thesis cover the development of (i) hybrid-DFT+Vw approach for the first principles description of mixed correlated and uncorrelated systems, (ii) zero-field-splitting tensor calculation for solid-state quantum bit characterization, (iii) a comprehensive model for dynamic nuclear spin polarization of solid-state qubits in semiconductors, and (iv) group theoretical description of qubits and novel twodimensional materials for topologically protected states.
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9.
  • Ivády, Viktor, et al. (författare)
  • First principles calculation of spin-related quantities for point defect qubit research
  • 2018
  • Ingår i: npj Computational Materials. - : SPRINGERNATURE. - 2057-3960. ; 4
  • Forskningsöversikt (refereegranskat)abstract
    • Point defect research in semiconductors has gained remarkable new momentum due to the identification of special point defects that can implement qubits and single photon emitters with unique characteristics. Indeed, these implementations are among the few alternatives for quantum technologies that may operate even at room temperature, and therefore discoveries and characterization of novel point defects may highly facilitate future solid state quantum technologies. First principles calculations play an important role in point defect research, since they provide a direct, extended insight into the formation of the defect states. In the last decades, considerable efforts have been made to calculate spin-dependent properties of point defects from first principles. The developed methods have already demonstrated their essential role in quantitative understanding of the physics and application of point defect qubits. Here, we review and discuss accuracy aspects of these novel ab initio methods and report on their most relevant applications for existing point defect qubits in semiconductors. We pay attention to the advantages and limitations of the methodological solutions and highlight additional developments that are expected in the near future. Moreover, we discuss the opportunity of a systematic search for potential point defect qubits, as well as the possible development of predictive spin dynamic simulations facilitated by ab initio calculations of spin-dependent quantities.
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10.
  • Ivády, Viktor, et al. (författare)
  • High-Fidelity Bidirectional Nuclear Qubit Initialization in SiC
  • 2016
  • Ingår i: Physical Review Letters. - : AMER PHYSICAL SOC. - 0031-9007 .- 1079-7114. ; 117:22
  • Tidskriftsartikel (refereegranskat)abstract
    • Dynamic nuclear polarization (DNP) is an attractive method for initializing nuclear spins that are strongly coupled to optically active electron spins because it functions at room temperature and does not require strong magnetic fields. In this Letter, we theoretically demonstrate that DNP, with near-unity polarization efficiency, can be generally realized in weakly coupled electron spin-nuclear spin systems. Furthermore, we theoretically and experimentally show that the nuclear spin polarization can be reversed by magnetic field variations as small as 0.8 Gauss. This mechanism offers new avenues for DNP-based sensors and radio-frequency free control of nuclear qubits.
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