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| 3. |
- Choubina, Tatiana, 1950-, et al.
(författare)
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Slow light in GaN
- 2008
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Ingår i: 16th Int. Symp. ¿Nanostructures: Physics and Technology,2008. ; , s. 257-
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Konferensbidrag (refereegranskat)
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| 4. |
- Falth, JF, et al.
(författare)
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Influence of dislocation density on photoluminescence intensity of GaN
- 2005
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 278:01-Apr, s. 406-410
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Tidskriftsartikel (refereegranskat)abstract
- The influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a model. GaN samples were grown by molecular beam epitaxy and metal-organic chemical vapour deposition. Different growth parameters and thicknesses of the layers resulted in different dislocation densities. The threading dislocation density, measured by atomic force microscopy, scanning electron microscopy and X-ray diffraction, covered a range from 5 x 10(8) to 3 x 10(10) cm(-2). Carrier concentration was measured by capacitance-voltage-, and Hall effect measurements and photoluminescence at 2 K was recorded. A model which accounts for the photoluminescence intensity as a function of dislocation density and carrier concentration in GaN is developed. The model shows good agreement with experimental results for typical GaN dislocation densities, 5 x 10(8)-1 x 10(10) cm(-2), and carrier concentrations 4 x 10(16)-1 x 10(18) cm(-3). ©, 2005 Elsevier B.V. All rights reserved.
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| 7. |
- Gogova, Daniela, 1967-, et al.
(författare)
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High-quality 2? bulk-like free-standing GaN grown by HydrideVapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation density
- 2005
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Ingår i: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 44:3, s. 1181-1185
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Tidskriftsartikel (refereegranskat)abstract
- High-quality 2? crack-free free-standing GaN has been attained by hydride vapour phase epitaxial growth on a Si-doped MOVPE GaN template with a low dislocation density and subsequent laser-induced lift-off process. A low value of dislocation density of ~2.0 × 107cm-2 on the Ga-polar face was determined from cathodoluminescence images. X-ray diffraction (XRD) and low-temperature photoluminescence (PL) were exploited to investigate the structural and optical properties of the GaN material. The full width at half maximum value of XRD ?-scan of the free-standing GaN is 248 arcsec for the (1 0 1 4) reflection. The XRD and low-temperature PL mapping measurements consistently proved the high crystalline quality as well as the lateral homogeneity and the small residual stress of the material. Hence, the bulk-like free-standing GaN studied here is highly advantageous for being used as a lattice-constant and thermal-expansion-coefficient matched substrate for additional strain-free homoepitaxy of III-nitrides-based device heterostructures. The strain-free homoepitaxy will significantly reduce the defect density and thus, an improvement of the device performance and lifetime could be achieved. © 2005 The Japan Society of Applied Physics.
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| 8. |
- Gogova, Daniela, et al.
(författare)
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Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
- 2006
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 371:1, s. 133-139
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, the potential of the high growth rate hydride vapor phase epitaxy technique and laser lift-off for the fabrication of large-area (2?) free-standing GaN substrates is revealed. Structural and optical properties of 250-µm-thick GaN layer grown on a MOVPE epitaxial lateral overgrown GaN template have been investigated employing different analytical experimental techniques. A low value of dislocation density of ~1×107 cm-2 on the Ga-terminated face of the free-standing material was determined from AFM images. X-ray diffraction (XRD), Raman scattering measurements, and low-temperature photoluminescence (PL) were exploited to assess the structural and optical quality of the GaN. The full-width at half-maximum value of XRD ?-scans of the free-standing GaN material was determined to be 264 arcsec for the (101¯4) reflection. The XRD and low-temperature PL mapping measurements consistently proved the good crystalline quality and lateral homogeneity and small residual stress inside the material. Hence, the free-standing GaN achieved is highly advantageous for a lattice-constant and thermal-expansion-coefficient matched substrate for additional strain-free homoepitaxy of III-nitrides-based device heterostructures. © 2005 Elsevier B.V. All rights reserved.
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| 10. |
- Ivanov, Ivan Gueorguiev, 1955-, et al.
(författare)
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Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to 4H-SiC
- 2006
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 73:4
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Tidskriftsartikel (refereegranskat)abstract
- The effective-mass theory is applied for description of the electronic states of shallow donors in indirect band-gap uniaxial crystals, which have three different components of the electron effective-mass tensor, and two different components of the tensor of the dielectric constant. The Hamiltonian in the resulting Schrödinger equation for the envelope function has D2h symmetry and, after proper parametrization, a nonvariational numerical method is used for its solution. Two particular cases of D∞h symmetry are identified and discussed separately. The comparison between theory and experiment for the 4H polytype of silicon carbide is revised using the least-squares method to determine the binding energies of the ground state of the most shallow nitrogen donor in this material, its valley-orbit split-off counterpart, and the mean value of the dielectric constant, and completed with calculation of the theoretical transition probabilities. In addition, the lowest-lying binding energies of the states, between which optical transitions are allowed, are calculated on a grid of values of the two parameters describing the anisotropy and the tabulated values can be used for interpolation to describe other materials. © 2006 The American Physical Society.
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