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Träfflista för sökning "WFRF:(Ivchenko E. L.) srt2:(2005-2009)"

Sökning: WFRF:(Ivchenko E. L.) > (2005-2009)

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1.
  • Choubina, Tatiana, 1950-, et al. (författare)
  • Light diffusion in GaN epilayers
  • 2007
  • Ingår i: 3rd International Conference on Spontaneous Coherence in Excitonic System,2007.
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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2.
  • Sundberg, Torbjörn, et al. (författare)
  • Small recoverable payload for deployable sounding rocket experiments
  • 2009
  • Ingår i: Proceedings of the 19th Esa Symposium on European Rocket and Balloon Programmes and Related Research. - 9789292212353 ; , s. 281-284
  • Konferensbidrag (refereegranskat)abstract
    • We present a design of a small payload for deployment from sounding rockets. The payload is intended for measurements in the ionosphere and the acquired data is stored onboard. For a secure recovery of the data and possible re-use of the payload, an inflatable structure is deployed during the payload descent. This reduces the payload speed and protects it from ground impact. On the ground, a localization system is activated, sending the payload position via a satellite link, and providing a radio beacon signal. The proposed small payload will allow high time resolution multipoint measurements in the ionosphere with small separation distances, thus allowing to address a number of unresolved questions in the field.
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3.
  • Toropov, A.A., et al. (författare)
  • III-V/II-VI heterovalent double quantum wells
  • 2006
  • Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 243:4, s. 819-826
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on design, fabrication by molecular beam epitaxy, and photoluminescence (PL) studies of III-V/II-VI heterovalent structures containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The studies of temperature-dependent and time-resolved PL have provided an insight into the nature of the exciton localization potential induced by the heterovalent interface. It is found that under the resonant conditions the observed emission mostly originates from the recombination of excitons confined in type II quantum-dot-like structures, where the holes are localised within the GaAs QW due to the well width fluctuations and the electrons are localized in the plane of the ZnCdMnSe QW due to the fluctuations of the conduction band offset at the heterovalent interface, induced by random variation of the interface microscopic structure. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.
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