| 1. |
- Adolph, C, et al.
(författare)
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Measurement of the eta -> 3 pi(0) Dalitz plot distribution with the WASA detector at COSY
- 2009
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Ingår i: Physics Letters B. - : Elsevier BV. - 0370-2693 .- 1873-2445. ; 677:1-2, s. 24-29
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Tidskriftsartikel (refereegranskat)abstract
- In the first production run of the WASA experiment at COSY, the eta decay into three neutral pions was measured in proton-proton interactions at a proton beam kinetic energy of 1.4 GeV. The Dalitz plot of the three pious was Studied using 1.2 x 10(5) fully reconstructed events. and the quadratic slope parameter alpha was determined to be -0.027 +/- 0.008(stat) +/- 0.005(syst). The result is consistent with previous measurements and further corroborates the importance of pion-pion final state interactions. (C) 2009 Elsevier B.V. All rights reserved.
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| 2. |
- Laukkanen, P., et al.
(författare)
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Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
- 2008
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 100, s. 086101-
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Tidskriftsartikel (refereegranskat)abstract
- First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.
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| 3. |
- Punkkinen, M. P. J., et al.
(författare)
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Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces : Combined first-principles, photoemission, and scanning tunneling microscopy study
- 2008
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 78, s. 195304-
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Tidskriftsartikel (refereegranskat)abstract
- Bismuth adsorbate-stabilized (2x1) and (2x4) reconstructions of the GaAs(100) surfaces have been studied by first-principles calculations, valence-band and core-level photoelectron spectroscopies, and scanning tunneling microscopy. It is demonstrated that large Bi atom size leads to the formation of the pseudogap at the Fermi energy and to the lower energy of an adsorbate-derived surface band, which contributes to the stabilization of the exceptional Bi/GaAs(100)(2x1) reconstruction. It is proposed that the Bi/GaAs(100)(2x4) reconstructions include asymmetric mixed Bi-As dimers, in addition to the Bi-Bi dimers. Based on the calculations, we solve the atomic origins of the surface core-level shifts (SCLSs) of the Bi 5d photoemission spectra from the Bi/GaAs(100)(2x4) surfaces. This allows for resolving the puzzle related to the identification of two SCLS components often found in the measurements of the Bi 5d and Sb 4d core-level emissions of the Bi/III-V and Sb/III-V(100)(2x4) surfaces. Finally, the reason for the absence of the common (2x4)-beta 2 structure and additional support for the stability of the (2x1) structure on the Bi/III-V(100) surfaces are discussed in terms of Bi atom size and subsurface stress.
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| 4. |
- Laukkanen, P, et al.
(författare)
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Electronic and structural properties of GaAs(100)(2x4) and InAs(100)(2x4) surfaces studied by core-level photoemission and scanning tunneling microscopy
- 2005
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 72:4
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Tidskriftsartikel (refereegranskat)abstract
- Electronic and structural properties of GaAs(100)(2x4), InAs(100)(2x4), and Sb/InAs(100)(2x4) reconstructed surfaces have been studied by synchrotron-radiation photoelectron spectroscopy and scanning tunneling microscopy (STM). Based on the difference spectrum of As 3d core-level spectra of III-As(100)(2x4), measured in different surface-sensitivity conditions, as well as the line shape of the As 3d emission from the Sb-induced (2x4) surface, we give evidence that the As 3d spectra of GaAs(100)(2x4) and InAs(100)(2x4) consist of two surface-core-level-shifted components. One of them is shifted about 0.2 eV to the lower kinetic energy from the bulk component. On the basis of the relative component intensities, this surface-shifted As 3d component is assigned to the emission from the first-layer As dimers in the established model of the (2x4) surface. The other component, shifted about 0.3 eV to the higher kinetic energy, is connected to the third-layer As-dimer site. The comparison of the core-level results between GaAs(100)(2x4) and InAs(100)(2x4) suggests that the alpha 2 phase, which has one As dimer in both the first and third atomic layers per unit cell, exists on GaAs(100)(2x4), similarly to the case of InAs(100)(2x4), as predicted in theory but not observed to date. Furthermore, the STM observation of the GaAs(100)(2x4)alpha 2 phase is reported.
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| 5. |
- Moskal, P., et al.
(författare)
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Near-threshold production of the eta meson via the quasifree pn -> pn eta reaction
- 2009
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Ingår i: Physical Review C. Nuclear Physics. - 0556-2813 .- 1089-490X. ; 79:1, s. 015208-
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Tidskriftsartikel (refereegranskat)abstract
- Total cross sections for the quasifree pn -> pn eta reaction in the range from the kinematical threshold up to 20 MeV excess energy have been determined. At threshold they exceed corresponding cross sections for the pn -> pn eta reaction by a factor of about 3 in contrast to the factor of 6 established for higher excess energies. To large extent, the observed decrease of the ratio s(pn -> pn eta)/s=sigma(pn -> pn eta) toward threshold may be assigned to the different energy dependence of the proton-proton and proton-neutron final-state interactions. The experiment was conducted using a proton beam of the cooler synchrotron COSY and a cluster jet deuteron target. The proton- neutron reactions were tagged by the spectator proton whose momentum was measured for each event. Protons and neutron outgoing from the pn -> pn eta reaction have been registered by means of the COSY-11 facility, an apparatus dedicated for threshold meson production.
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| 6. |
- Guziewicz, E., et al.
(författare)
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Mn on the surface of ZnO(0001) - a resonant photoemisson study
- 2005
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T115, s. 541-544
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of Mn/ZnO system has been invesigated by synchrotron radiation photoemission. Manganese vacuum deposition was done at room temperature onto a ZnO(0001) single crystal for coverage Mn-Theta <= 4 ML. Photoemission spectra taken near the Mn3p-Mn3d absorption edge after each deposition step show resonant enhancement of Mn3d states within 10 eV of the Fermi edge. The experimentally deduced partial Mn3d density of states for Theta >= 1.2 ML shows at least three features: a major Mn3d structure at 3.8-4.5 eV below the Fermi edge, a valence structure at lower binding energy (1-3 eV) and a broad satelite in the 5.5-9 eV range. The branching ratio of satellite/main structure increases with depostion from 0.33 for 0.4 ML to 0.65 for 4 ML. After annealing up to 500 degrees C the satellite/main ratio decreases to 0.43 indicating a high degree of hybridization between the Mn3d states and valence band of ZnO. After annealing no manganese cap layer was found at the crystal surfaces as was confirmed by the lack of metallic Fermi edge in photoemission spectra and by scanning Auger spectroscopy experiment. The photoemission Mn3p core level spectra taken after annealing consist of two components separated by about 4 eV, which shows that at least two manganese states are observed in the Mn-ZnO interface region.
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| 7. |
- Glover, C. J., et al.
(författare)
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Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances
- 2009
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 173:2-3, s. 103-107
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Tidskriftsartikel (refereegranskat)abstract
- Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics. (c) 2009 Elsevier B.V. All rights reserved.
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| 8. |
- Jiricek, P., et al.
(författare)
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Photoemission from alpha and beta phases of the GaAs(001)-c(4 x 4) surface
- 2009
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028. ; 603:20, s. 3088-3093
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Tidskriftsartikel (refereegranskat)abstract
- We prepared alpha- and beta surface phases of GaAs(0 0 1)-c(4 x 4) reconstruction by molecular beam epitaxy (MBE) using As-4 and As-2 molecular beams, respectively, and examined them by angle-resolved ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) with synchrotron radiation as an excitation source. The UPS valence band spectra and the XPS 3d core level data show pronounced differences corresponding to the surface composition and the atomic structure of the two phases, as proposed in the literature. In UPS, the beta phase is characterized by an intensive surface state 0.5 eV below the top of the valence band at low photon energy, while an analogous peak in the alpha phase spectra is missing. The surface state is interpreted in terms of dangling bonds on As dimers. The As3d and Ga3d core level photoelectron lines exhibit phase-specific shapes as well as differences in the number, position and intensity of their deconvoluted components. The location of various atoms in the surface and subsurface layers is discussed; our photoemission results support models of the beta phase and the alpha phase with As-As dimers and Ga-As heterodimers, respectively. (C) 2009 Elsevier B.V. All rights reserved.
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| 9. |
- Kowalik, I. A., et al.
(författare)
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MnAs dots grown on GaN( 000(1)over-bar)-(1x1) surface
- 2007
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Ingår i: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969 .- 1098-0121. ; 75:23, s. 11-
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Tidskriftsartikel (refereegranskat)abstract
- MnAs has been grown by means of MBE on the GaN(000 (1) over bar)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1x10(11) cm(-2) and 2.5x10(11) cm(-2), respectively (as observed by atomic force microscopy), occurred for the layer thickness higher than 5 ML. Electronic structure of the MnAs/GaN systems was studied by resonant photoemission spectroscopy. That led to determination of the Mn 3d-related contribution to the total density of states distribution of MnAs. It has been proven that the electronic structures of the MnAs dots grown by the two procedures differ markedly. One corresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar to that reported for half-metallic zinc-blende MnAs. Both systems behave superparamagnetically (as revealed by magnetization measurements), but with both the blocking temperatures and the intradot Curie temperatures substantially different. The intradot Curie temperature is about 260 K for the former system while markedly higher than room temperature for the latter one. Relations between growth process, electronic structure, and other properties of the studied systems are discussed. Possible mechanisms of half-metallic MnAs formation on GaN are considered.
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| 10. |
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