| 1. |
- Vincent, Jonathan, et al.
(författare)
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Theory of a room-temperature silicon quantum dot transitor as a sensitive electrometer
- 2004
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95, s. 323-
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Tidskriftsartikel (refereegranskat)abstract
- We consider theoretically the use of a room-temperature silicon quantum dot based device for electrometer applications. The low power device includes two split gates that quantize the electronic energy levels in the emitter and collector regions. The base consists of a silicon quantum dot buried in silicon dioxide. The small size of the dot and quantization of the states in the leads combined to allow the device to operate at room temperature. The nonlinear current–voltage characteristics can be significantly altered by small changes to the potential of the split gates. Power dissipation in the device therefore changes with the split gate voltage, and this can be exploited in electrometer applications. A simple model of the power dissipated when the device is part of a microwave resonant inductor-resistor-capacitor tank circuit suggests that large changes in device power can be achieved by changing the gate voltage, thereby forming a measurable signal. We also demonstrate that the power dissipation in the device changes as the base width is varied, and that the current through the device increases exponentially with a decrease in base width.
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| 2. |
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| 3. |
- Linder, M., et al.
(författare)
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Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement
- 2000
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Ingår i: IEEE transactions on semiconductor manufacturing. - : Institute of Electrical and Electronics Engineers (IEEE). - 0894-6507 .- 1558-2345. ; 13:2, s. 119-126
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Tidskriftsartikel (refereegranskat)abstract
- A new procedure for extracting the emitter and base series resistances of bipolar junction transistors is presented. The parameters are extracted from a single measurement in the forward active region on one transistor test structure with two separate base contacts, making it a simple and attractive tool for bipolar transistor characterization. The procedure comprises two methods for extracting the emitter resistance and two for extracting the base resistance. The choice of method is governed by the amount of current crowding or conductivity modulation present in the intrinsic base region. The new extraction procedure was successfully applied to transistors fabricated in an in-house double polysilicon bipolar transistor process and a commercial 0.8-mu m single polysilicon BiCMOS process. We found that the simulated and measured Gummel characteristics are in excellent agreement and the extracted series resistances agree well with those obtained by means of HF measurements. By adding external resistors to the emitter and base and then extracting the series resistances, me verified that the two base contact test structure offers a simple means of separating the influence of emitter and base series resistances on the transistor characteristics.
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| 4. |
- Linder, M., et al.
(författare)
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On DC modeling of the base resistance in bipolar transistors
- 2000
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 44:8, s. 1411-1418
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Tidskriftsartikel (refereegranskat)abstract
- The total base resistance R-BTot constitutes a crucial parameter in modeling bipolar transistors. The significant physical effects determining R-BTot are current crowding and conductivity modulation in the base, both causing reduction of R-BTot With increasing base current I-B. In this paper, it is shown that the reduction of R-BTot(I-B) With increasing I-B is directly related to the physical effect dominating in the base. A new model for R-BTot(I-B) is presented where a parameter alpha is introduced to account for the contributions of current crowding and conductivity modulation in the base. Theoretically, alpha is equal to 0.5 when conductivity modulation is dominant and close to 1.0 when current crowding is the most significant effect. This was verified by measurements and simulations using a distributed transistor model which accounts for the lateral distribution of the base current and the stored base charge. The model proposed for R-BTot(I-B) is very suitable for compact transistor modeling since it is given in a closed form expression handling both current crowding and conductivity modulation in the base. An accurate extraction procedure of the model parameters is also presented.
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