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| 2. |
- Agustsson, J. S., et al.
(författare)
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Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO(2)
- 2008
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Ingår i: Journal of Physics Conference Series. - : IOP Science. - 1742-6596.
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Konferensbidrag (refereegranskat)abstract
- Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250 degrees C, while a continuous film was formed at a thickness of 3.9 nm at room temperature and 3.5 nm at 250 degrees C. The electrical resistivity increases with increased growth temperature, as well as the morphological grain size, and the surface roughness, measured with a scanning tunneling microscope (STM).
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| 3. |
- Agustsson, J. S., et al.
(författare)
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Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2
- 2008
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 254:22, s. 7356-7360
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Tidskriftsartikel (refereegranskat)abstract
- Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 degrees C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 degrees C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.
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| 6. |
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| 7. |
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| 8. |
- Helgadottir, Anna, et al.
(författare)
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The same sequence variant on 9p21 associates with myocardial infarction, abdominal aortic aneurysm and intracranial aneurysm
- 2008
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Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1546-1718 .- 1061-4036. ; 40:2, s. 217-224
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Tidskriftsartikel (refereegranskat)abstract
- Recently, two common sequence variants on 9p21, tagged by rs10757278-G and rs10811661-T, were reported to be associated with coronary artery disease (CAD)(1-4) and type 2 diabetes (T2D)(5-7), respectively. We proceeded to further investigate the contributions of these variants to arterial diseases and T2D. Here we report that rs10757278-G is associated with, in addition to CAD, abdominal aortic aneurysm (AAA; odds ratio (OR) 1.31, P = 1.2 x 10(-12)) and intracranial aneurysm (OR = 1.29, P = 2.5 x 10(-6)), but not with T2D. This variant is the first to be described that affects the risk of AAA and intracranial aneurysm in many populations. The association of rs10811661-T to T2D replicates in our samples, but the variant does not associate with any of the five arterial diseases examined. These findings extend our insight into the role of the sequence variant tagged by rs10757278-G and show that it is not confined to atherosclerotic diseases.
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| 9. |
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| 10. |
- Nygren, Mats, et al.
(författare)
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An exploration of noble metal substitution in germanium based clathrates : International Conference on Thermoelectrics (2008)
- 2008
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Ingår i: Institute of Electrical and Electronics Engineers. - 1094-2734. ; , s. 219-222
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Tidskriftsartikel (refereegranskat)abstract
- The thermopower (S) is sensitive to changes in the d. of states (g()) near the Fermi level (F). Strongly correlated electron systems with transitions metals and/or rare earth elements exhibit sharp d. of states features near the Fermi level due to the d and f states. This leads to the large thermopowers often found in these compds. A wide variety of germanium based clathrates contg. transition metals form (Ba8TM-xGe46-x where TM = Ni, Pd, Pt, Cu, Ag and Au are known to exist). Enhancement of the thermopower while retaining the low thermal cond. and relatively high elec. cond. characteristic of the clathrates will improve thermoelec. performance of these compds. As part of an ongoing investigation of transition metal substituted clathrates, in this paper we present a characterization of the structural and electronic transport properties of two p-type silver and gold substituted samples. Recently the thermoelec. properties of several Ba8AuxGe46-x samples were presented in a proceedings paper, but to the best of our knowledge this is the first time thermoelec. properties are presented for Ba8Ag6Ge40.
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