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- Degermark, Mikael, et al.
(författare)
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Evaluation of CRTP performance over cellular radio links
- 2000
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Ingår i: IEEE personal communications. - : Institute of Electrical and Electronics Engineers (IEEE). - 1070-9916 .- 1558-0652. ; 7:4, s. 20-25
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Tidskriftsartikel (refereegranskat)abstract
- To make mobile IP telephony over cellular radio systems an economically viable alternative to circuit-switched voice, it is an absolute requirement that the 40-octet IP/UDP/RTP headers on IP telephony packets be reduced in size to conserve bandwidth and radio spectrum. We evaluate the performance of the default header compression scheme for IP/UDP/RTP, CRTP (RFC-2508), over links built on cellular radio access technology. We find that CRTP does not perform adequately over such links, and suggest that a more robust header compression scheme must be developed to make IP telephony over cellular economically viable.
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- Engstrand, Per, 1955-, et al.
(författare)
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Method of producing bleached thermomechanical pulp (tmp) or bleached chemithermomechanical pulp (ctmp) [Förfarande för framställning av blekt termomekanisk massa (TMP) eller blekt kemitermomekanisk massa (CTMP)]
- 2003
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Patent (populärvet., debatt m.m.)abstract
- There is a need for a cheaper method of producing bleached TMP and CTMP without impairing the properties of the pulp. This is made possible by the present invention, which relates to a method of producing said pulps in which finely divided lignocellulosic material is defibrated after pretreatment and the resultant pulp is bleached in the form of a suspension with bleaching agent that increases the anionic charge of the pulp fibres, whereafter the pulp suspension is cleaned and then possibly further treated, for instance bleached, characterised in that the defibration is effected with the aid of a) a refiner that has counter-rotating refining discs while using an extra high temperature (HTDD), or b) a refiner that has a single rotating refining disc(s) having a single refining zone or two parallel refining zones, while using an extra high temperature and while rotating the disc(s) at an extra high speed (RTS), and in that the cleaning treatment comprises first screeming the pulp suspension and them hydrocyclone cleaning said suspension, wherewith the reject obtained with each cleaning process is treated individually and the treated reject is returned to the advancing pulp suspension.
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- Eriksson, Mikael, et al.
(författare)
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How to manage complex, multinational R&D projects successfully
- 2002
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Ingår i: Engineering Management Journal. - 1042-9247 .- 0960-7919. ; 14:2, s. 53-60
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Tidskriftsartikel (refereegranskat)abstract
- The globalization of markets, mergers of international companies, and integration of managerial and business processes in global corporations are changing project management fundamentals. A clearly recognizable trend in multinational companies since the mid-1980s has been globalization of R & D and competence portfolios. Applied development is usually conducted in the form of a distributed project organization. A project team is formed across geographical, organizational, and cultural boundaries, engaging in a project with a global focus. Although a multinational project organization has great potential in many dimensions, there is no doubt that the execution of a distributed high technological project is still a great challenge. This article identifies success factors in the management of distributed projects with global goals. The authors have focused on the practical experiences of the execution of complex multinational projects in the area of applied system development for power industry.
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- Grahn, J. V., et al.
(författare)
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A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
- 2000
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 44:3, s. 549-554
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Tidskriftsartikel (refereegranskat)abstract
- A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor deposition at reduced pressure was used for low-temperature SiGe epitaxy. Following SiGe epitaxy, the process temperature budget was kept very low with 900 degrees C for 10 s as the highest temperature step. A very high current gain of almost 2000 and cut off frequency of 62 GHz were achieved for a uniform 12% Ge profile. The breakdown voltage BVCEO and forward Early voltage were equal to 2.9 and 6.5 V, respectively.
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