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Träfflista för sökning "WFRF:(KANSKI J) srt2:(2000-2004)"

Sökning: WFRF:(KANSKI J) > (2000-2004)

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1.
  • Sadowski, J., et al. (författare)
  • Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers
  • 2000
  • Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 18:3, s. 1697-1700
  • Tidskriftsartikel (refereegranskat)abstract
    • GaMnAs layers with Mn contents from 0.05% to 7% were grown by low temperature molecular beam epitaxy. At substrate temperatures lower than 300 degrees C and in this composition range a uniform ternary GaMnAs compound can be grown without MnAs precipitation. Reflection high energy electron diffraction intensity oscillations recorded during GaMnAs growth were used to calibrate the composition of the GaMnAs films with high accuracy (better than 0.1%). Films containing more than 1% Mn exhibit a ferromagnetic phase transition with Curie temperatures from a few up to 70 K depending on the composition and other growth parameters. In contrast to previous reports we have observed this transition also in the case of layers grown at very low substrate temperatures (below 300 degrees C).
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2.
  • Agui, A., et al. (författare)
  • Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
  • 2000
  • Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 166:1-4, s. 309-312
  • Tidskriftsartikel (refereegranskat)abstract
    • A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L2,3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, which are reproduced using ab initio calculations.
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  • Mankefors, S., et al. (författare)
  • Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs
  • 2000
  • Ingår i: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 61:8, s. 5540-5545
  • Tidskriftsartikel (refereegranskat)abstract
    • Ultrathin AlAs(100) layers of 1-, 2-, and 5-ML thickness buried in GaAs are investigated by ab initio calculations. Unique experimental soft-x-ray emission spectra are explained in terms of interface effects and changes with layer thickness are found in the density of states. Only the central layer in the 5-ML geometry is bulklike. A valence-band offset of 0.53 eV is also found for this structure, while no offset exists in the 1- and 2-ML cases. Very good agreement is achieved between theory and experiment.
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  • Agui, A, et al. (författare)
  • Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
  • 2000
  • Ingår i: APPLIED SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0169-4332. ; 166:1-4, s. 309-312
  • Tidskriftsartikel (refereegranskat)abstract
    • A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L-2,L-3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, wh
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  • Resultat 1-10 av 21

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