| 1. |
- Mazumdar, Dipanjan, et al.
(författare)
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The valence band electronic structure of rhombohedral-like and tetragonal-like BiFeO3 thin films from hard X-ray photoelectron spectroscopy and first-principles theory
- 2016
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 208, s. 63-66
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Tidskriftsartikel (refereegranskat)abstract
- Abstract We investigate the electronic structure of rhombohedral-like (R) and tetragonal-like (T) BiFeO3 thin films using high energy X-ray photoelectron spectroscopy and first-principles electronic structure calculations. By exploiting the relative elemental cross sections to selectively probe the elemental composition of the valence band, we identify a strong Bi 6p contribution at the top of the valence band in both phases, overlapping in energy range with the O 2p states; this assignment is confirmed by our electronic structure calculations. We find that the measured occupied Bi 6p signal lies closer to the top of the valence band in the T phase than in the R phase, which we attribute, using our electronic structure calculations, to lower Bi–O hybridization in the T phase. We note, however, that our calculations of the corresponding densities of states underestimate the difference between the phases, suggesting that matrix element effects resulting from the different effective symmetries also contribute. Our results shed light on the chemical nature of the stereochemically active Bi lone pairs, which are responsible for the large ferroelectric polarization of BiFeO3.
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| 2. |
- Panda, Swarup K., et al.
(författare)
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High photon energy spectroscopy of NiO : Experiment and theory
- 2016
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Ingår i: PHYSICAL REVIEW B. - 2469-9950. ; 93:23
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Tidskriftsartikel (refereegranskat)abstract
- We have revisited the valence band electronic structure of NiO by means of hard x-ray photoemission spectroscopy (HAXPES) together with theoretical calculations using both the GW method and the local density approximation + dynamical mean-field theory (LDA+DMFT) approaches. The effective impurity problem in DMFT is solved through the exact diagonalization (ED) method. We show that the LDA+DMFT method in conjunction with the standard fully localized limit (FLL) and around mean field (AMF) double-counting alone cannot explain all the observed structures in the HAXPES spectra. GW corrections are required for the O bands and Ni-s and p derived states to properly position their binding energies. Our results establish that a combination of the GW and DMFT methods is necessary for correctly describing the electronic structure of NiO in a proper ab initio framework. We also demonstrate that the inclusion of photoionization cross section is crucial to interpret the HAXPES spectra of NiO. We argue that our conclusions are general and that the here suggested approach is appropriate for any complex transition metal oxide.
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| 3. |
- Phuyal, Dibya, 1985-, et al.
(författare)
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Electronic Structure of Two-Dimensional Lead(II) Iodide Perovskites : An Experimental and Theoretical Study
- 2018
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Ingår i: Chemistry of Materials. - : American Chemical Society (ACS). - 0897-4756 .- 1520-5002. ; 30:15, s. 4959-4967
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Tidskriftsartikel (refereegranskat)abstract
- Layered two-dimensional (2D) hybrid organic-inorganic perovskites (HOP) are promising materials for light-harvesting applications because of their chemical stability, wide flexibility in composition and dimensionality, and increases in photovoltaic power conversion efficiencies. Three 2D lead iodide perovskites were studied through various X-ray spectroscopic techniques to derive detailed electronic structures and band energetics profiles at a titania interface. Core-level and valence band photoelectron spectra of HOP were analyzed to resolve the electronic structure changes due to the reduced dimensionality of inorganic layers. The results show orbital narrowing when comparing the HOP, the layered precursor PbI2, and the conventional 3D (CH3NH3)PbI3 such that different localizations of band edge states and narrow band states are unambiguously due to the decrease in dimensionality of the layered HOPs. Support from density functional theory calculations provide further details on the interaction and band gap variations of the electronic structure. We observed an interlayer distance dependent dispersion in the near band edge electronic states. The results show how tuning the interlayer distance between the inorganic layers affects the electronic properties and provides important design principles for control of the interlayer charge transport properties, such as the change in effective charge masses as a function of the organic cation length. The results of these findings can be used to tune layered materials for optimal functionality and new applications.
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| 4. |
- Phuyal, Dibya, et al.
(författare)
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The electronic structure and band interface of cesium bismuth iodide on a titania heterostructure using hard X-ray spectroscopy
- 2018
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Ingår i: Journal of Materials Chemistry A. - : Royal Society of Chemistry (RSC). - 2050-7488 .- 2050-7496. ; 6:20, s. 9498-9505
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Tidskriftsartikel (refereegranskat)abstract
- Bismuth halide compounds as a non-toxic alternative are increasingly investigated because of their potential in optoelectronic devices and their rich structural chemistry. Hard X-ray spectroscopy was applied to the ternary bismuth halide Cs3Bi2I9 and its related precursors BiI3 and CsI to understand its electronic structure at an atomic level. We specifically investigated the core levels and valence band using X-ray photoemission spectroscopy (PES), high-resolution X-ray absorption (HERFD-XAS), and resonant inelastic X-ray scattering (RIXS) to get insight into the chemistry and the band edge properties of the two bismuth compounds. Using these element specific X-ray techniques, our experimental electronic structures show that the primary differences between the two bismuth samples are the position of the iodine states in the valence and conduction bands and the degree of hybridization with bismuth lone pair (6s(2)) states. The crystal structure of the two layered quasi-perovskite compounds plays a minor role in modifying the overall electronic structure, with variations in bismuth lone pair states and iodine band edge states. Density Functional Theory (DFT) calculations are used to compare with experimental data. The results demonstrate the effectiveness of hard X-ray spectroscopies to identify element specific bulk electronic structures and their use in optoelectronic devices.
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| 5. |
- Phuyal, Dibya, et al.
(författare)
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The origin of low bandgap and ferroelectricity of a co-doped BaTiO3
- 2018
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Ingår i: Europhysics letters. - : IOP Publishing. - 0295-5075 .- 1286-4854. ; 124:2
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Tidskriftsartikel (refereegranskat)abstract
- We recently demonstrated the lowest bandgap bulk ferroelectric material, BaTi1-x(Mn1/2Nb1/2)xO3, a promising candidate material for visible light absorption in opto- electronic devices. Using a combination of x-ray spectroscopies and density functional theory (DFT) calculations, we here elucidate this compound’s electronic structure and the modifications induced by Mn doping. In particular, we are able to rationalize how this compound retains its ferroelectricity even through a significant reduction of the optical gap upon Mn doping. The local electronic structure and atomic coordination are investigated using x-ray absorption at the Ti K, Mn K, and O K edges, which suggests only small distortions to the parent tetragonal ferroelectric system, BaTiO3, thereby providing a clue to the substantial retention of ferroelectricity in spite of doping. Features at the Ti K edge, which are sensitive to local symmetry and an indication of Ti off-centering within the Ti-O6 octahedra, show modest changes with doping and strongly corroborates with our measured polarization values. Resonant photoelectron spectroscopy results suggest the origin of the reduction of the bandgap in terms of newly created Mn d bands that hybridize with O 2p states. X-ray absorption spectra at the O K-edge provide evidence for new states below the conduction band of the parent compound, illustrating additional contributions facilitating bandgap reduction.
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