| 1. |
- Feigin, Valery L., et al.
(författare)
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Global, regional, and national burden of stroke and its risk factors, 1990-2019 : a systematic analysis for the Global Burden of Disease Study 2019
- 2021
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Ingår i: Lancet Neurology. - : Elsevier. - 1474-4422 .- 1474-4465. ; 20:10, s. 795-820
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Tidskriftsartikel (refereegranskat)abstract
- Background Regularly updated data on stroke and its pathological types, including data on their incidence, prevalence, mortality, disability, risk factors, and epidemiological trends, are important for evidence-based stroke care planning and resource allocation. The Global Burden of Diseases, Injuries, and Risk Factors Study (GBD) aims to provide a standardised and comprehensive measurement of these metrics at global, regional, and national levels. Methods We applied GBD 2019 analytical tools to calculate stroke incidence, prevalence, mortality, disability-adjusted life-years (DALYs), and the population attributable fraction (PAF) of DALYs (with corresponding 95% uncertainty intervals [UIs]) associated with 19 risk factors, for 204 countries and territories from 1990 to 2019. These estimates were provided for ischaemic stroke, intracerebral haemorrhage, subarachnoid haemorrhage, and all strokes combined, and stratified by sex, age group, and World Bank country income level. Findings In 2019, there were 12.2 million (95% UI 11.0-13.6) incident cases of stroke, 101 million (93.2-111) prevalent cases of stroke, 143 million (133-153) DALYs due to stroke, and 6.55 million (6.00-7.02) deaths from stroke. Globally, stroke remained the second-leading cause of death (11.6% [10.8-12.2] of total deaths) and the third-leading cause of death and disability combined (5.7% [5.1-6.2] of total DALYs) in 2019. From 1990 to 2019, the absolute number of incident strokes increased by 70.0% (67.0-73.0), prevalent strokes increased by 85.0% (83.0-88.0), deaths from stroke increased by 43.0% (31.0-55.0), and DALYs due to stroke increased by 32.0% (22.0-42.0). During the same period, age-standardised rates of stroke incidence decreased by 17.0% (15.0-18.0), mortality decreased by 36.0% (31.0-42.0), prevalence decreased by 6.0% (5.0-7.0), and DALYs decreased by 36.0% (31.0-42.0). However, among people younger than 70 years, prevalence rates increased by 22.0% (21.0-24.0) and incidence rates increased by 15.0% (12.0-18.0). In 2019, the age-standardised stroke-related mortality rate was 3.6 (3.5-3.8) times higher in the World Bank low-income group than in the World Bank high-income group, and the age-standardised stroke-related DALY rate was 3.7 (3.5-3.9) times higher in the low-income group than the high-income group. Ischaemic stroke constituted 62.4% of all incident strokes in 2019 (7.63 million [6.57-8.96]), while intracerebral haemorrhage constituted 27.9% (3.41 million [2.97-3.91]) and subarachnoid haemorrhage constituted 9.7% (1.18 million [1.01-1.39]). In 2019, the five leading risk factors for stroke were high systolic blood pressure (contributing to 79.6 million [67.7-90.8] DALYs or 55.5% [48.2-62.0] of total stroke DALYs), high body-mass index (34.9 million [22.3-48.6] DALYs or 24.3% [15.7-33.2]), high fasting plasma glucose (28.9 million [19.8-41.5] DALYs or 20.2% [13.8-29.1]), ambient particulate matter pollution (28.7 million [23.4-33.4] DALYs or 20.1% [16.6-23.0]), and smoking (25.3 million [22.6-28.2] DALYs or 17.6% [16.4-19.0]). Interpretation The annual number of strokes and deaths due to stroke increased substantially from 1990 to 2019, despite substantial reductions in age-standardised rates, particularly among people older than 70 years. The highest age-standardised stroke-related mortality and DALY rates were in the World Bank low-income group. The fastest-growing risk factor for stroke between 1990 and 2019 was high body-mass index. Without urgent implementation of effective primary prevention strategies, the stroke burden will probably continue to grow across the world, particularly in low-income countries.
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| 2. |
- Micah, Angela E., et al.
(författare)
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Tracking development assistance for health and for COVID-19 : a review of development assistance, government, out-of-pocket, and other private spending on health for 204 countries and territories, 1990-2050
- 2021
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Ingår i: The Lancet. - : Elsevier. - 0140-6736 .- 1474-547X. ; 398:10308, s. 1317-1343
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Forskningsöversikt (refereegranskat)abstract
- Background The rapid spread of COVID-19 renewed the focus on how health systems across the globe are financed, especially during public health emergencies. Development assistance is an important source of health financing in many low-income countries, yet little is known about how much of this funding was disbursed for COVID-19. We aimed to put development assistance for health for COVID-19 in the context of broader trends in global health financing, and to estimate total health spending from 1995 to 2050 and development assistance for COVID-19 in 2020. Methods We estimated domestic health spending and development assistance for health to generate total health-sector spending estimates for 204 countries and territories. We leveraged data from the WHO Global Health Expenditure Database to produce estimates of domestic health spending. To generate estimates for development assistance for health, we relied on project-level disbursement data from the major international development agencies' online databases and annual financial statements and reports for information on income sources. To adjust our estimates for 2020 to include disbursements related to COVID-19, we extracted project data on commitments and disbursements from a broader set of databases (because not all of the data sources used to estimate the historical series extend to 2020), including the UN Office of Humanitarian Assistance Financial Tracking Service and the International Aid Transparency Initiative. We reported all the historic and future spending estimates in inflation-adjusted 2020 US$, 2020 US$ per capita, purchasing-power parity-adjusted US$ per capita, and as a proportion of gross domestic product. We used various models to generate future health spending to 2050. Findings In 2019, health spending globally reached $8. 8 trillion (95% uncertainty interval [UI] 8.7-8.8) or $1132 (1119-1143) per person. Spending on health varied within and across income groups and geographical regions. Of this total, $40.4 billion (0.5%, 95% UI 0.5-0.5) was development assistance for health provided to low-income and middle-income countries, which made up 24.6% (UI 24.0-25.1) of total spending in low-income countries. We estimate that $54.8 billion in development assistance for health was disbursed in 2020. Of this, $13.7 billion was targeted toward the COVID-19 health response. $12.3 billion was newly committed and $1.4 billion was repurposed from existing health projects. $3.1 billion (22.4%) of the funds focused on country-level coordination and $2.4 billion (17.9%) was for supply chain and logistics. Only $714.4 million (7.7%) of COVID-19 development assistance for health went to Latin America, despite this region reporting 34.3% of total recorded COVID-19 deaths in low-income or middle-income countries in 2020. Spending on health is expected to rise to $1519 (1448-1591) per person in 2050, although spending across countries is expected to remain varied. Interpretation Global health spending is expected to continue to grow, but remain unequally distributed between countries. We estimate that development organisations substantially increased the amount of development assistance for health provided in 2020. Continued efforts are needed to raise sufficient resources to mitigate the pandemic for the most vulnerable, and to help curtail the pandemic for all. Copyright (C) 2021 The Author(s). Published by Elsevier Ltd.
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| 3. |
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- 2019
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Tidskriftsartikel (refereegranskat)
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| 4. |
- Elfving, Anders, et al.
(författare)
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Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89, s. 083510-083513
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Tidskriftsartikel (refereegranskat)abstract
- A three-terminal metal-oxide-semiconductor field-effect transistor type of photodetector has been fabricated with a multiple stack of Ge dot/SiGe quantum-well heterostructures as the active region for light detection at 1.3–1.55 µm. Gate-dependent edge incidence photoconductivity measurements at room temperature revealed a strong dependence of the photoresponse on the gate voltage. At positive gate bias, the hole transport from the dots into the wells was improved, resulting in a faster response. The high photoresponsivity at negative VG, measured to be 350 mA W–1 at 1.31 µm and 30 mA W–1 at 1.55 µm, was ascribed to the photoconductive gain.
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| 5. |
- Ghoncheh, Karim Asgari, et al.
(författare)
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Fear of COVID-19 and religious coping mediate the associations between religiosity and distress among older adults
- 2021
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Ingår i: HEALTH PROMOTION PERSPECTIVES. - : TABRIZ UNIV MEDICAL SCIENCES & HEALTH SERVICES. - 2228-6497. ; 11:3, s. 316-322
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Tidskriftsartikel (refereegranskat)abstract
- Background: A mediation model was proposed to explain how religiosity, religious cooping, and fear of coronavirus disease 2019 (COVID-19) explained anxiety and depression among older adults. Methods: With the use of a cross-sectional design, the Integrated Health System was used to randomly invite 1000 older adults residing in Qazvin to participate in an online survey. Within the period of November, 2020 to January 2021, 696 older Iranian adults (mean age = 69.56 years; 57.9% women) agreed to participate in the study and reported demographic information as well as measures of religiosity, fear of COVID-19, religious coping, anxiety, and depression. Results: Religiosity had direct effects on depression (B [SE] = -0.087 [0.037]; P = 0.023) but not anxiety (B [SE]=-0.063 [0.036]; P = 0.072). Moreover, both fear of COVID-19 and religious coping significantly mediated the association between religiosity and anxiety (B [SE] = -0.360 [0.035]; p = 0.002) and that between religiosity and depression (B [SE] = -0.365 [0.034]; P = 0.002). Conclusion: During the tough time of COVID-19 pandemic, religiosity and religious coping were protectors for older adults in developing good mental. Therefore, future research is needed to examine education programs that are effective for older adults to obtain correct knowledge concerning COVID-19, including the protective COVID-19 infection behaviors. Therefore, older adults may reduce their fear via their enhanced correct knowledge concerning COVID-19.
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| 6. |
- Gustafsson, Oscar, et al.
(författare)
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A performance assessment of type-II interband In0.5Ga 0.5Sb QD photodetectors
- 2013
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 61, s. 319-324
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Tidskriftsartikel (refereegranskat)abstract
- Self-assembled quantum-dot (QD) structures with type-II band alignment to the surrounding matrix material have been proposed as a III/V material approach to realize small-bandgap device structures suitable for photon detection and imaging in the long-wavelength infrared (LWIR) band. Here, we analyze the photoresponse of In0.5Ga0.5Sb/InAs QD photodiodes and estimate the system performance of type-II QD -based photodetectors. A review of alternative design approaches is presented and the choice of matrix material is discussed in terms of band alignment and its effect on the photoresponse. Photodiodes were fabricated consisting of 10 layers of In0.5Ga 0.5Sb QDs grown on InAs (0 0 1) substrates with metal-organic vapor-phase epitaxy (MOVPE). The photoresponse and dark current were measured in single pixel devices as a function of temperature in the range 20-230 K. The quantum efficiency shows an Arrhenius type behavior, which is attributed to hole trapping. This severely limits the detector performance at typical LWIR sensor operating temperatures (60-120 K). A device design with the matrix material InAs0.6Sb0.4 is proposed as a mean to improve the performance by reducing the barrier for hole transport. This can potentially allow type-II InGaSb QDs to be a competitive sensor material for LWIR detection.
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| 7. |
- Gustafsson, Oscar, et al.
(författare)
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Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots
- 2013
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 59, s. 89-92
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Tidskriftsartikel (refereegranskat)abstract
- We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 μm at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.
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| 8. |
- Gustafsson, Oscar, et al.
(författare)
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Photoluminescence photoresponse from InSb/InAs-based quantum dot structures
- 2012
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Ingår i: Optics Express. - : Optical Society of America. - 1094-4087. ; 20:19, s. 21264-71
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Tidskriftsartikel (refereegranskat)abstract
- InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 μm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 μm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 μm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.
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| 9. |
- Hussain, Laiq, 1979-, et al.
(författare)
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SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
- 2018
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Ingår i: Journal of the Korean Physical Society. - : Korean Physical Society. - 0374-4884 .- 1976-8524. ; 73:11, s. 1604-1611
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Tidskriftsartikel (refereegranskat)abstract
- Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.
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| 10. |
- Karim, Amir, 1976-, et al.
(författare)
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Characterization of Er/O-doped Si-LEDs with low thermal quenching
- 2005
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Ingår i: Material Research Society Symposium Proceedings. ; , s. 117-124
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Konferensbidrag (refereegranskat)abstract
- Electroluminescence studies of MBE-grown Er/O-doped Si-diodes at reverse bias have been done. For some devices there is much reduced thermal quenching of the emission at 1.54 µm. There are examples where the temperature dependence is abnormal in that the intensity for a constant current even increases with temperature up to e.g. 80 oC. These devices have been studied with cross-sectional transmission electron microscopy to see the microstructure of the Er/O-doped layers as well as the B-doped SiGe-layers that are used as electron emitters during reverse bias. Although there are defects in the layers there is no evidence for large thick precipitates of SiO2. While reduced thermal quenching often is attributed to having the Er-ions within SiO2 layers, this is not the case for our structures as evidenced by our TEM-studies. The origin of the abnormal temperature dependence is attributed to the two mechanisms of breakdown in the reverse-biased diodes. At low temperature the breakdown current is mainly due to avalanche resulting in low-energy electrons and holes that quenches the intensity by Auger de-excitation of the Er-ions. At higher temperature the breakdown current is mainly phonon-assisted tunnelling which results in a more efficient pumping with less de-excitation of the Er-ions. Finally at the highest temperatures the thermal quenching sets in corresponding to an activation energy of 125 meV, which is slightly lower than 150 meV that has been reported in other studies.
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