| 1. |
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
|
|
| 6. |
- TORNEVIK, C, et al.
(författare)
-
ADSORPTION OF SN ON SI(111)7X7 - RECONSTRUCTIONS IN THE MONOLAYER REGIME
- 1994
-
Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 314:2, s. 179-187
-
Tidskriftsartikel (refereegranskat)abstract
- Different monolayer phases of Sn on Si(111)7 x 7 have been studied by means of scanning tunneling microscopy (STM), core-level photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). The STM results show that square-root 3 x square-root 3 reconstructions are obtained for room-temperature deposition of 1/3 ML of Sn followed by sample annealing in a broad temperature range. A T4 Sn adatom square-root 3 x square-root 3 phase is formed for temperatures between 500 and 800-degrees-C, with a concentration of defects that is strongly dependent on the temperature and which is as high as 25% for the lowest temperatures. Above 825-degrees-C a second square-root 3 x square-root 3 adatom reconstruction is formed, a mosaic-like phase with a 1: 1 mixture of Si and Sn atoms in T4 positions. The results from investigations of the higher coverage 2 square-root 3 x 2 square-root 3 reconstruction by XPS and RBS support the theory that this phase is a two-layer epitaxial Sn structure with all Si(111) dangling bonds saturated. The Sn coverage for this phase was determined to be between 1 and 1.2 ML.
|
|
| 7. |
- Törnevik, C., et al.
(författare)
-
Adsorption of Sn onSi(111)7 × 7 : reconstructions in the monolayer regime
- 1994
-
Ingår i: Surface Science. - 0039-6028. ; 314:2, s. 179-187
-
Tidskriftsartikel (refereegranskat)abstract
- Different monolayer phases of Sn on Si(111)7 × 7 have been studied by means of scanning tunneling microscopy (STM), core-level photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). The STM results show that 3 × 3 reconstructions are obtained for room-temperature deposition of 1 3 ML of Sn followed by sample annealing in a broad temperature range. A T4 Sn adatom 3 ×3 phase is formed for temperatures between 500 and 800°C, with a concentration of defects that is strongly dependent on the temperature and which is as high as 25% for the lowest temperatures. Above 825°C a second 3×3 adatom reconstruction is formed, a mosaic-like phase with a 1:1 mixture of Si and Sn atoms in T4 positions. The results from investigations of the higher coverage 2 3 × 2 3 reconstruction by XPS and RBS support the theory that this phase is a two-layer epitaxial Sn structure with all Si(111) dangling bonds saturated. The Sn coverage for this phase was determined to be between 1 and 1.2 ML. © 1994.
|
|
| 8. |
- Wigren, C., et al.
(författare)
-
Sm- and Yb-induced reconstructions of the Si(111) surface
- 1993
-
Ingår i: Physical Review B. - 0163-1829. ; 48:15, s. 11014-11019
-
Tidskriftsartikel (refereegranskat)abstract
- Low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy results from the submonolayer Sm- and Yb-induced surface structures are presented. Several similar metal-induced surface reconstructions are found to exist for Yb and Sm on Si(111) for low submonolayer coverages: 3×2, 5×1, and 7×1. At higher submonolayer coverage, Yb induces a 2×1 reconstruction while Sm induces a (3 × 3) R30°-like reconstruction. Yb is found to be divalent in all structures, whereas the Sm valence increases with increasing coverage. In the 3×2 structure only divalent Sm is present, in the 5×1 and 7×1 structures a small amount of trivalent Sm appears, and, finally, in the (3 × 3) R30°structure approximately half of the Sm atoms are trivalent. The surface Fermi-level position in the band gap for the different Sm and Yb reconstructions has been measured. The difference in valence stability between Sm and Yb is suggested to be the cause of the difference in the high-coverage structures found and the differences in pinning level for the two elements observed for the 5×1 and 7×1 structures. © 1993 The American Physical Society.
|
|
| 9. |
|
|
| 10. |
|
|
