| 1. |
- Hirschfeld, RMA, et al.
(författare)
-
Social functioning in depression: a review
- 2000
-
Ingår i: The Journal of clinical psychiatry. - : Physicians Postgraduate Press, Inc. - 0160-6689. ; 61:4, s. 268-275
-
Tidskriftsartikel (refereegranskat)
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
|
|
| 6. |
|
|
| 7. |
- Bartenstein, M, et al.
(författare)
-
Atoms and wires: Toward atom chips
- 2000
-
Ingår i: IEEE JOURNAL OF QUANTUM ELECTRONICS. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9197. ; 36:12, s. 1364-1377
-
Tidskriftsartikel (refereegranskat)abstract
- Atoms can be trapped and guided using nanofabricated wires on surfaces, achieving the scales required by quantum information proposals. These atom chips form the basis for robust and widespread application of cold atoms ranging from atom optics to fundame
|
|
| 8. |
- Gerlach, L O, et al.
(författare)
-
Metal ion enhanced binding of amd3100 to asp-262 in the cxcr4 receptor.
- 2003
-
Ingår i: Biochemistry. - : American Chemical Society (ACS). - 0006-2960 .- 1520-4995. ; 42:3, s. 710-717
-
Tidskriftsartikel (refereegranskat)abstract
- The affinity of AMD3100, a symmetrical nonpeptide antagonist composed of two 1,4,8,11-tetraazacyclotetradecane (cyclam) rings connected through a 1,4-dimethylene(phenylene) linker to the CXCR4 chemokine receptor was increased 7, 36, and 50-fold, respectively, by incorporation of the following: Cu2+, Zn2+, or Ni2+ into the cyclam rings of the compound. The rank order of the transition metal ions correlated with the calculated binding energy between free acetate and the metal ions coordinated in a cyclam ring. Construction of AMD3100 substituted with only a single Cu2+ or Ni2+ ion demonstrated that the increase in binding affinity of the metal ion substituted bicyclam is achieved through an enhanced interaction of just one of the ring systems. Mutational analysis of potential metal ion binding residues in the main ligand binding crevice of the CXCR4 receptor showed that although binding of the bicyclam is dependent on both Asp171 and Asp262, the enhancing effect of the metal ion was selectively eliminated by substitution of Asp262 located at the extracellular end of TM-VI. It is concluded that the increased binding affinity of the metal ion substituted AMD3100 is obtained through enhanced interaction of one of the cyclam ring systems with the carboxylate group of Asp262. It is suggested that this occurs through a strong concomitant interaction of one of the oxygen's directly with the metal ion and the other oxygen to one of the nitrogens of the cyclam ring through a hydrogen bond.
|
|
| 9. |
- Ni, Wei-Xin, et al.
(författare)
-
X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (=100 nm) using a low temperature growth step
- 2001
-
Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 227-228, s. 756-760
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Relaxation of thin SiGe layers (~90 nm) grown by molecular beam epitaxy using a low temperature growth step (120-200°C) has been investigated using two-dimensional reciprocal space mapping of X-ray diffraction. The samples studied have been divided in two groups, depending on the substrate cooling process during the growth of the low temperature layer. It has been found that a higher degree of relaxation was easily achieved for the sample group without growth interruption. A process window for full relaxation of the Si0.74Ge0.26 layer has been observed in the range of 140-150°C. © 2001 Elsevier Science B.V.
|
|
