| 1. |
- Glover, C. J., et al.
(författare)
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Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances
- 2009
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 173:2-3, s. 103-107
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Tidskriftsartikel (refereegranskat)abstract
- Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics. (c) 2009 Elsevier B.V. All rights reserved.
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| 2. |
- Richter, M. C., et al.
(författare)
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NiFe2O4 and Fe3O4 studied by XMCD and resonant photoemission
- 2009
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Ingår i: The European Physical Journal. Special Topics. - : Springer Science and Business Media LLC. - 1951-6355 .- 1951-6401. ; 169, s. 175-180
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Tidskriftsartikel (refereegranskat)abstract
- X-ray magnetic circular dichroism and resonant photoemission at the Fe and Ni L-2,L-3 edges have been used to investigate the electronic structure of NiFe2O4 (NFO) thin films. The results, when compared to those obtained on Fe3O4, indicate that in a 12 nm NFO film the Ni atoms occupy mainly B sites, as in bulk NFO, and that a decrease in the thickness of the film results in a modi. cation of the nickel hybridization.
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| 3. |
- Siller, L., et al.
(författare)
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Core and valence exciton formation in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated Si nanocrystals at the Si L-2,L-3 edge
- 2009
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Ingår i: Journal of Physics: Condensed Matter. - : IOP Publishing. - 1361-648X .- 0953-8984. ; 21:9
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Tidskriftsartikel (refereegranskat)abstract
- Resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy and x-ray excited optical luminescence (XEOL) have been used to measure element specific filled and empty electronic states over the Si L-2,L-3 edge of passivated Si nanocrystals of narrow size distribution ( diameter 2.2 +/- 0.4 nm). These techniques have been employed to directly measure absorption and luminescence specific to the local Si nanocrystal core. Profound changes occur in the absorption spectrum of the nanocrystals compared with bulk Si, and new features are observed in the nanocrystal RIXS. Clear signatures of core and valence band exciton formation, promoted by the spatial confinement of electrons and holes within the nanocrystals, are observed, together with band narrowing due to quantum confinement. XEOL at 12 K shows an extremely sharp feature at the threshold of orange luminescence (i.e., at similar to 1.56 eV ( 792 nm)) which we attribute to recombination of valence excitons, providing a lower limit to the nanocrystal band gap.
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