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Sökning: WFRF:(Koelling Sebastian) > (2011)

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1.
  • Koelling, Sebastian, et al. (författare)
  • Characteristics of cross-sectional atom probe analysis on semiconductor structures
  • 2011
  • Ingår i: Ultramicroscopy. - : Elsevier BV. - 0304-3991 .- 1879-2723. ; 111:6, s. 540-545
  • Tidskriftsartikel (refereegranskat)abstract
    • The laser-assisted Atom Probe has been proposed as a metrology tool for next generation semiconductor technologies requiring sub-nm spatial resolution. In order to assess its potential for the analysis of three-dimensional semiconductor structures like FinFETs, we have studied the Atom Probes lateral resolution on a silicon, silicon–germanium multilayer structure. We find that the interactions of the laser with the semiconductor materials in the sample distort the sample surface. This results in transient errors of the measured dimensions of the structure. The deformation of the sample furthermore leads to a degradation of the lateral resolution. In the experiments presented in this paper, the Atom Probe reaches a lateral resolution of 1-1.8 nm/decade. In this paper we will discuss the reasons for the distortions of the tip and demonstrate that with the present state of data reconstruction severe quantification errors limit its applicability for the quantitative analysis of heterogeneous semiconductor structures. Our experiments show that reconstruction algorithms taking into account the time dependent nanostructure of the tip shape are required to arrive at accurate results.
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2.
  • Koelling, Sebastian, et al. (författare)
  • In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography
  • 2011
  • Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 109:10, s. 104909-
  • Tidskriftsartikel (refereegranskat)abstract
    • It is shown by SEM imaging of the tip and by observing the emission pattern of the evaporated atoms that laser assisted evaporation in an atom probe can lead to nonhemispherical tip shapes and time-dependent nonuniform emission. We have investigated this nonuniformity by observing the change in field of view when using laser wavelengths of 515 nm and 343 nm on silicon. The change is monitored in situ by 0.5 nm thick silicon oxide. We demonstrate that the field of view can easily be changed by more than 10 nm and that the apparent oxide layer thickness can deviate substantially from its correct value. The dependence of the tip shape deformations and the reconstruction artifacts on the laser wavelength are explained through simulations of the laser-tip interaction and nonhomogeneous heating effects.
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