| 1. |
- Kolessar, Remy, et al.
(författare)
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A new physics-based circuit model for 4H-SiC power diodes implemented in SABER
- 2001
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Ingår i: Proc. of the Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2001, APEC 2001, vol. 2, 4-8 March 2001.. ; , s. 989-994
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Konferensbidrag (refereegranskat)abstract
- A circuit-oriented model for 4H-SiC power diodes is presented. The modeling technique used in this work was previously applied to a silicon (Si) power diode model for both turn-on and turn-off transients, and presents a good trade-off between accuracy and speed. The model is physics-based, but includes judicious approximations for fast calculation, and includes up-to-date physical models for silicon carbide, with temperature dependence. The proposed model is practically implemented in the circuit simulator SABER, using the MAST modeling language. Model performances are compared to measurements on 2.5 kV 400 A Si IGBT/SiC diode modules from ABB at various input currents.
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| 2. |
- Kolessar, Remy, et al.
(författare)
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An experimentally validated electro-thermal compact model for 4H-SiC power diodes
- 2001
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Ingår i: Proc. of IEEE International Symposium on Industrial Electronics ISIE, 12-16 June 2001, vol. 2.. ; , s. 1345-1350
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Konferensbidrag (refereegranskat)abstract
- The implementation of a circuit-oriented model for high-current, high-voltage 4H-SiC power diodes is presented. The compact modeling technique used presents a good trade-off between accuracy and speed for modeling of bipolar power devices, and a high flexibility for inclusion of various physical models. Implementation in the SABER circuit simulator of the model is performed using the MAST hardware description language (HDL). Up-to-date physical models for 4H-SiC semiconductor materials including thermal dependence, which are relevant for the device switching behavior are evaluated and implemented in the compact model. Simulation results using the proposed model are compared to both measurements and device simulations on 2.5 kV, 400 A Si-IGBT/4H-SiC diode modules from ABB at various circuit and temperature conditions. The model has proven to be a valuable simulation tool for investigation of future power circuit designs based on SiC technology.
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| 3. |
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| 4. |
- Kolessar, Remy, et al.
(författare)
-
Electro-Thermal Circuit Model for the Power Diode Turn-On Process
- 2000
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Ingår i: Proc. of the IEEE Nordic Workshop on Power and Industrial Electronics, Aalborg, Denmark, June 2000.. ; , s. 69-73
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Konferensbidrag (refereegranskat)abstract
- In this paper, a physics-based, electro-thermal model for thepower diode turn-on is presented. The model, implementedin the circuit simulator SABER, is based on an approximationof the carrier distribution in the n-base of the diode usingsecond degree polynomials, resulting in a fast but accuratecalculation method. The turn-on physics is accuratelydescribed by taking into account low injection level as well asa correct transport equation for the minority carriers. Modelperformances are compared both to device numerical simulationsand measurements and show good agreements forvarious circuit and temperature conditions, as well as for differentdevice designs.
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| 5. |
- Kolessar, Remy, et al.
(författare)
-
Physics-Based Power Device Models in SABER - Implementation Issues
- 2000
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Ingår i: Proc. of the IEEE Computer in Power Electronics, COMPEL 2000, Blacksburg, USA, August 2000.. ; , s. 18-22
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Konferensbidrag (refereegranskat)abstract
- In this paper, the implementation issues of physics-based power device models in the SABER circuit simulator through the MAST High Description Language (HDL) are discussed. The possibility to use dynamical if-statements in the system matrix (equations section) of a MAST template is presented. By means of this implementation method, systems of differential equations for boundary value problems can be efficiently implemented and solved in SABER. To illustrate the method, the implementation of a physics-based power diode model is taken as an example. Simulation results using this model are presented to demonstrate the efficiency and numerical stability of the method.
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