| 1. |
- Kalinina, E. V., et al.
(författare)
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Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers
- 2003
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 37:10, s. 1229-1233
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Tidskriftsartikel (refereegranskat)abstract
- The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p(+)-n-n(+) diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of high-resistivity, pure 4H-SiC epitaxial layers possessing n-type conductivity and grown by vapor-transport epitaxy. The use of such structures made it possible to study the radiation defects in the epitaxial layer at temperatures as high as 700 K. Rectifying properties of the diode structures were no longer observed after irradiation of the samples with neutrons with a dose of 6 x 10(14) cm(-2); this effect is caused by high (up to 50 GOmega) resistance of the layer damaged by neutron radiation. However, the diode characteristics of irradiated p(+)-n-n(+) structures were partially recovered after an annealing at 650 K.
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| 2. |
- Kalinina, E. V., et al.
(författare)
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Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions
- 2004
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 38:10, s. 1187-1191
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p(+)-n-n(+) diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.
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| 3. |
- Violina, G. N., et al.
(författare)
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Photoelectric properties of p(+)-n junctions based on 4H-SiC ion-implanted with aluminum
- 2002
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:6, s. 706-709
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Tidskriftsartikel (refereegranskat)abstract
- The photoelectric properties of p(+)-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It is shown that such photodetectors combine in full measure the advantages of photostructures formed on the basis of Schottky barriers and epitaxial p-n junctions. The results of the theoretical calculation of spectral characteristics of ion-implanted photodetectors are in good agreement with experimental data. The structures feature an efficiency of collection of nonequilibrium charge carriers close to 100% in the spectral range of the photon energies of 3.5-4.25 eV.
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| 4. |
- Violina, G. N., et al.
(författare)
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Silicon carbide detectors of high-energy particles
- 2002
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:6, s. 710-713
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Tidskriftsartikel (refereegranskat)abstract
- The results of studying 4H-SiC p(+)-n junctions ion-implanted with aluminum as detectors of high-energy particles are reported. The junctions were formed in SiC epitaxial films grown by chemical vapor deposition. The concentration of uncompensated donors was (3-5) x 10(15) cm(-3), and the charge-carrier diffusion length was L-p = 2.5 mum. The detectors were irradiated with 4.8-5.5-MeV alpha particles at 20degreesC. The efficiency of collection of the induced charge was as high as 0.35. The possibilities of operating SiC detectors at elevated temperatures (similar to500degreesC) are analyzed.
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| 5. |
- Ivanov, A M, et al.
(författare)
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High-resolution short range ion detectors based on 4H-SiC films
- 2004
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Ingår i: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 30:7, s. 575-577
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Tidskriftsartikel (refereegranskat)abstract
- The energy resolution of SiC detectors has been studied in application to the spectrometry of alpha particles with 5.1-5.5 MeV energies. The Schottky barrier structure of the detector was based on a CVD-grown epitaxial n-4H-SiC film with a thickness of 26 mum and an uncompensated donor concentration of (1-2) x 10(15) cm(-3). An energy resolution of 0.5% achieved for the first time with SiC detectors allows fine structure of the alpha particle spectrum to be revealed. The average energy of the electron-hole pair formation in 4H-SiC is estimated at 7.71 eV.
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