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- Zhang, J, et al.
(författare)
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Growth characteristics of SiC in a hot-wall CVD reactor with rotation
- 2002
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Ingår i: Materials Science Forum(ISSN 0255-5476) Volume 389-3. ; , s. 191-194
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Konferensbidrag (refereegranskat)abstract
- SiC epitaxy has been studied in a horizontal hot-wall CVD reactor with rotation by gas foil levitation. A capacity of three 2 inch wafers has been realized, and the thickness uniformity over a 2 inch wafer is below 1% and the n-doping uniformity over a 35mm wafer, below 10%. Both n- and p-type doping is readily achieved with no memory effect. The layer morphology has been investigated and a featureless surface has been obtained through process optimization and a modification of the hot zone.
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| 3. |
- Zhang, J, et al.
(författare)
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In situ etching of 4H-SiC in H-2 with addition of HCl for epitaxial CVD growth
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 239-242
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Konferensbidrag (refereegranskat)abstract
- We have investigated in situ etching of 4H SiC in a horizontal hot-wall CVD reactor. A small amount of HCl is introduced together with the major etching gas, H-2. The etch rate is found to increase with temperature and decrease with pressure. An increased H-2 flow proportionally increases the etch rate. The etch mechanism is proposed from the etch rate dependencies on the etch parameters. The morphology both after the etch and after the subsequent growth is investigated and the optimized etch conditions for good morphology are established. The correlation between the morphology and the etch mechanism is pointed out.
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